摘要
设计了一款高输出电压情况下的高精度低功耗电压基准电路。电路采用了比例采样负反馈结构达到较高和可控的输出电压,并利用曲率补偿电路极大地减小了输出电压的温度系数。针对较宽输入电压范围内的超低线性调整率规格,给出了多级带隙级联的电路结构。针对功耗和超低负载调整率的问题,电路采用了基于运算放大器的限流模式和内置大尺寸横向扩散金属氧化物半导体(LDMOS)晶体管的设计。该电路在CSMC 0.25μm高压BCD工艺条件下进行设计、仿真和流片,测试结果表明,该电压基准输出电压为3.3 V,温度系数为19.4×10^(-6)/℃,线性调整率为5.6μV/V,负载调整率为23.3μV/V,工作电流为45μA。
A high precision and low power consumption voltage reference circuit which could output a high voltage was designed. The proportional sampling negative feedback structure was used for achieving high and controllable output voltage. The temperature coefficient of the output voltage was reduced greatly by using the curvature compensation circuit. The multistage bandgap cascaded circuit structure was given for ultralow linear regulation over a wide input voltage range. Aiming at the problems of power consumption and ultralow load regulation,the circuit adopted the current limiting mode based on the operational amplifier and the design of the built-in large size latterally diffused metal oxide semiconductor（ LDMOS） transistor. The circuit was designed,simulated and fabricated in CSMC 0. 25 μm high voltage BCD process conditions. The test results show that the output voltage of the voltage reference is3. 3 V,the temperature coefficient is 19. 4×10^（-6）/℃,the linear regulation is 5. 6 μV/V,the load regulation is 23. 3 μV/V,and the operating current is 45 μA.
出处
《半导体技术》
CSCD
北大核心
2017年第11期820-826,875,共8页
Semiconductor Technology
基金
江苏省教育厅资助项目(PPZY2015B190)
江苏省教育厅"青蓝工程"科技创新团队资助项目
关键词
高精度
低功耗
电压基准
温度系数
线性调整率
负载调整率
high precision
low power consumption
voltage reference
temperature coefficient
linear regulation
load regulation
