摘要
提出了一种超低功耗、无BJT的基于亚阈值CMOS特性的基准电压源。采用正负温度系数电流求和的方式来获得与温度无关的电流,再转换成基准电压;采用共源共栅电流镜来提高电源电压抑制比和电压调整率。基于SMIC 0.18μm CMOS工艺进行仿真,结果表明,在-20℃~135℃温度范围内,温漂系数为2.97×10^(-5)/℃;在0.9~3.3V电源电压范围内,电压调整率为0.089%;在频率为100Hz时,电源电压抑制比为-74dB,电路功耗仅有230nW。
An ultra low power dissipation voltage reference source without BJT based on sub-threshold characteristic of CMOS was presented. The current which was independent of temperature was obtained by the sum of currents with negative and positive temperature coefficients, and then converted into a reference voltage. A cascode current mirror was used to increase the power supply rejection ratio （PSRR） and reduce the line sensitivity of the circuit. Based on SMIC 0. 18 μm CMOS process, the simulated results showed that the voltage＇s temperature coefficient was 2.97 10^-5/℃ at a temperature range from-20 ℃ to 135 ℃. The line sensitivity was 0. 089% at a supply voltage range from 0.9 to 3.3 V. The PSRR was-74 dB at 100 Hz frequency. The power dissipation of the circuit was only 230 nW.
作者
岳宏卫
邓进丽
朱智勇
段吉海
韦雪明
YUE Hongwei DENG Jinli ZHU Zhiyong DUAN Jihai WEI Xueming(Guangxi Key Lab. of Precision Navigation Technology and Application, Guilin University of Electronic Technology Guilin, Guangxi 541004, P. R. China)
出处
《微电子学》
CSCD
北大核心
2017年第2期152-155,159,共5页
Microelectronics
基金
国家自然科学基金资助项目(11264009
61465004)
广西自然科学基金资助项目(2013GXNSFAA019338)
桂林电子科技大学研究生教育创新计划资助项目(YJCXS201514)
关键词
亚阈值区
高精度
高电源电压抑制比
超低功耗
低温漂
Sub-threshold
High precision
High PSRR
Ultra low power dissipation
Low temperature coefficient
