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A low-voltage low-power CMOS voltage reference based on subthreshold MOSFETs 被引量:5

A low-voltage low-power CMOS voltage reference based on subthreshold MOSFETs
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摘要 This paper describes a CMOS voltage reference using only resistors and transistors working in weak inversion,without the need for any bipolar transistors.The voltage reference is designed and fabricated by a 0.18μm CMOS process.The experimental results show that the proposed voltage reference has a temperature coefficient of 370 ppm/℃at a 0.8 V supply voltage over the temperature range of-35 to 85℃and a 0.1%variation in supply voltage from 0.8 to 3 V.Furthermore,the supply current is only 1.5μA at 0.8 V supply voltage. This paper describes a CMOS voltage reference using only resistors and transistors working in weak inversion,without the need for any bipolar transistors.The voltage reference is designed and fabricated by a 0.18μm CMOS process.The experimental results show that the proposed voltage reference has a temperature coefficient of 370 ppm/℃at a 0.8 V supply voltage over the temperature range of-35 to 85℃and a 0.1%variation in supply voltage from 0.8 to 3 V.Furthermore,the supply current is only 1.5μA at 0.8 V supply voltage.
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2011年第8期118-121,共4页 半导体学报(英文版)
关键词 bandgap reference CMOS SUBTHRESHOLD bandgap reference CMOS subthreshold
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参考文献11

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同被引文献19

  • 1LEUNG K N, MOK P K T. A Sub 1 V 15 ppm/~C CMOS bandgap voltage reference without requiring low threshold voltage device [ J]. IEEE Journal of Solid-State Circuits, 2002, 37 (4): 526-530. 被引量:1
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  • 3ACHARYA V, BANERJEE B. A supply insensitive re- sistor-less bandgap reference with buffered output [ C] // Proceedings of Circuits and Systems Workshop (DCAS). Dallas, USA, 2010: 1-4. 被引量:1
  • 4ZHOU Z K, ZHU P S, SHI Y, et al. A CMOS voltage reference based on mutual compensation of Vt. and Vtp ~ J]. IEEE Transactions on Circuits & Systems II Express Briefs, 2012, 59 (6): 341-345. 被引量:1
  • 5OSAKI Y, HIROSE T, KUROKI N, et al. 1.2-V sup- ply, 100-nW, 1.09-V bandgap and 0.7-V supply, 52.5-nW, 0.55-V subbandgap reference circuits for na-nowatt CMOS LSls [ J]. IEEE Journal of Solid-State Cir- cuits, 2013, 48 (6): 1530-1538. 被引量:1
  • 6HIROSE T, UENO K, KUROKI N, et al. A CMOS bandgap and sub-bandgap voltage reference circuits for nanowatt power LSIs [ C~ // Proceedings of Solid State Circuits Conference (A-SSCC). Beijing, China, 2010: 1-4. 被引量:1
  • 7BUCK A E, MCDONALD C L, LEWIS S H, et al. A CMOS bandgap reference without resistors [ J ]. IEEE Journal of Solid-State Circuits, 2002, 37 (1): 81-83. 被引量:1
  • 8YANG M, SUN W F, XU S, et al. A 140mV 0.8 ~A CMOS voltage reference based on sub-threshold MOSFETs [J 1. Journal of Semiconductors, 2011, 32 ( 11 ) : 127-131. 被引量:1
  • 9YAN W, LI W, LIU R. A 150-nA 13.4-ppm/~C switched-capacitor CMOS sub-bandgap voltage reference [J 1. Journal of Semiconductors, 2011, 32 (32) : 155-160. 被引量:1
  • 10UENO K, HIROSE T, ASAI T, et al. A 300 nW, 15 ppm/~C , 20 ppm/V CMOS voltage reference circuit consisting of subthreshold MOSFETs [ J]. IEEE Journal of Solid-State Circuits, 2009, 44 (7): 2047-2054. 被引量:1

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