摘要
根据磷化铟晶片的清洗机理,进行了三组磷化铟晶片清洗实验,并使用原子力显微镜（AFM）、表面分析仪和X射线光电子能谱（XPS）对晶片的化学成分、表面粗糙度及均匀性进行了表征,最终确定了氧化-酸剥离的磷化铟清洗工艺,并对清洗过程中晶片表面雾值变化进行研究。结果表明,清洗后的磷化铟晶片表面粗糙度达到0.12 nm,优于国外磷化铟晶片（0.15~0.17 nm）。XPS测试结果显示晶片表面形成了富铟层,富铟层降低了磷化铟晶片表面化学活性,起到了表面稳定作用,提高了外延生长质量。
According to the cleaning mechanism of In P wafer,three cleaning experiments of In P wafer were carried out. Chemical components,surface roughness and uniformity of wafers were characterized by the atomic force microscope（ AFM）,surface scan instruments and X-ray photoelectron spectroscopy（ XPS）. Oxidation-acid stripping cleaning methods of In P were approved,and the change of the surface haze value during the cleaning process was studied. The results show that after cleaning,the surface roughness of In P wafers is as low as 0. 12 nm,which is better than that of foreign In P wafers（ 0. 15- 0. 17 nm）. XPS test results show that a indium-rich layer is formed on the surface of wafers,which lowers the surface chemical activity of In P wafers,stabilizes the wafer surface and enhances the epilayer growth quality.
出处
《半导体技术》
CAS
CSCD
北大核心
2016年第8期620-624,共5页
Semiconductor Technology
