摘要
磷化铟单晶作为一种重要的外延层衬底材料被广泛应用于光电器件。衬底外延生长和电子器件制备要求磷化铟晶片表面具有极低的表面粗糙度、无表面/亚表面损伤和残余应力等,需对磷化铟晶片表面进行抛光加工,其表面质量决定了后续的外延层质量并最终影响磷化铟基器件的性能。综述了磷化铟晶体化学机械抛光（CMP）技术进展;介绍了磷化铟表面的化学反应原理、CMP去除机理;详细分析了磷化铟抛光液组分及pH值、抛光工艺参数（抛光压力、抛光盘转速、抛光垫特性、磨料种类、粒径及浓度）等对磷化铟抛光质量的影响;介绍了磷化铟抛光片的清洗工艺,并对磷化铟CMP的后续研究方向提出一些建议。
As an important substrate material of epitaxial layers,indium phosphide （InP） is extensively used in the optoelectronic devices. For the substrate epitaxial growth and electronic device fabrication,the surface of InP wafer must be polished to obtain a ultra-smooth surface with extremely low surface roughness,no surface/subsurface damage and no residual stress. The polishing quality of InP surface determines the growth quality of the epitaxial layer and influences the performance of InP-based devices.The progress of the chemical mechanical polishing （CMP） of InP is reviewed. The chemical reaction principle on the InP surface and material removal mechanism in the CMP are introduced. Moreover,the effects of the components and pH value of the polishing slurry,and the polishing parameters （such as polishing pressure,polishing speed,characteristic of the polishing pad,particle size and concentration of the abrasives） on polishing quality of InP are detaily analyzed. The cleaning process of the polished InP substrate is introduced. Some suggestions for the future research of the CMP of InP substrate are put forward.
出处
《半导体技术》
CAS
CSCD
北大核心
2018年第3期201-210,共10页
Semiconductor Technology
基金
国家自然科学基金资助项目(51375097)
广东省自然科学基金资助项目(2015A030311044)
广东省科技计划资助项目(2016A010102014)
关键词
磷化铟
化学机械抛光(CMP)
抛光机理
抛光液
加工工艺
indium phosphide
chemical mechanical polishing（CMP）
polishing mechanism
polishing slurry
processing technology
