摘要
本文通过变温的Ｈａｌ测量系统地研究了ＧａＡｓ基ＨＥＭＴ和ＰＨＥＭＴ以及ＩｎＰ基ＨＥＭＴ三种结构材料的电子迁移率μｎ和二维电子浓度ｎｓ．仔细地分析了不同ＨＥＭＴ结构材料的散射机制对电子迁移率的影响以及不同ＨＥＭＴ材料结构对电子浓度的影响．研究结果表明ＩｎＰ基ＨＥＭＴ的ｎｓ×μｎ值比ＧａＡｓ基ＨＥＭＴ和ＰＨＥＭＴ的ｎｓ×μｎ值都大，说明可以用ｎｓ×μｎ值来判断ＨＥＭＴ结构材料的性能好坏．
Abstract We have systematically investigated the variation of electron mobility μ n and
electron concentration n s of three materials with temperature by dint of the Hall
measurement of the materials of the three structures, GaAs based HEMT and PHEMT as well as
InP based HEMT. The influences of the scattering mechanisms of the different HEMT structure
materials on electron mobility and the different HEMT materials structures on electron
concentration have been discussed in detail. The research results show that the values of n
s× μ n for InP based HEMT are larger than that for GaAs based HEMT and PHEMT. We also
have illustrated that the performance of HEMT structure materials can be determined by the
value of n s× μ n.
