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磷化铟基高电子迁移率晶体管欧姆接触工艺 被引量:1

Ohmic Contact for InP-Based HEMTs
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摘要 针对磷化铟(InP)基高电子迁移率晶体管(HEMT),进行了Ni/Ge/Au和Ni/Ge/Au/Ge/Ni/Au两种金属结构快速退火(10~40s)和长时间合金(10min)的实验.通过研究比较,得到了更适用于InP基HEMT器件制作的合金方法.利用Ni/Ge/Au/Ge/Ni/Au结构,在270℃下合金10min形成了典型值.0.068Ω·mm的接触电阻. An ohmic contact experiment is conducted for InP-based high electron mobility transistors (HEMTs) with two different metal structures of Ni/Ge/Au and Ni/Ge/Au/Ge/Ni/Au. Comparison is made between rapid thermal annealing (10- 40s) and alloying over a long time(10min). Optimized alloying conditions for the InP-based HEMT are obtained. Using the Ni/Ge/Au/Ge/Ni/Au structure,a typical contact resistance of 0. 068Ω· mm is achieved by alloying at 270℃ for 10min.
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2006年第11期1970-1973,共4页 半导体学报(英文版)
基金 国家重点基础研究发展规划资助项目(批准号:G2002CB311901)~~
关键词 磷化铟 高电子迁移率晶体管 欧姆接触 合金 传输线模型 InP HEMT ohmic contact alloy TLM
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参考文献8

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同被引文献7

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