摘要
针对磷化铟(InP)基高电子迁移率晶体管(HEMT),进行了Ni/Ge/Au和Ni/Ge/Au/Ge/Ni/Au两种金属结构快速退火(10~40s)和长时间合金(10min)的实验.通过研究比较,得到了更适用于InP基HEMT器件制作的合金方法.利用Ni/Ge/Au/Ge/Ni/Au结构,在270℃下合金10min形成了典型值.0.068Ω·mm的接触电阻.
An ohmic contact experiment is conducted for InP-based high electron mobility transistors (HEMTs) with two different metal structures of Ni/Ge/Au and Ni/Ge/Au/Ge/Ni/Au. Comparison is made between rapid thermal annealing (10- 40s) and alloying over a long time(10min). Optimized alloying conditions for the InP-based HEMT are obtained. Using the Ni/Ge/Au/Ge/Ni/Au structure,a typical contact resistance of 0. 068Ω· mm is achieved by alloying at 270℃ for 10min.
基金
国家重点基础研究发展规划资助项目(批准号:G2002CB311901)~~