摘要
应用钛/铂/金(Ti/Pt/Au)金属系统在InP基HEMT制备工艺中形成了良好的欧姆接触,通过优化合金条件,获得了较低的欧姆接触电阻,并在此基础上对钛/铂/金欧姆接触形成机理进行了深入讨论。实验结果表明:在氮气气氛下进行温度300℃/30 s快速热退火后,得到欧姆接触最小电阻值为0.025Ω·mm。同时合金界面形态良好。制备出栅长1.0μm的InP基HEMT器件,测试结果表明器件具有良好的DC和RF特性,器件最大跨导(Gmmax)为672 mS/mm。饱和源漏电流IDSS为900 mA/mm,阈值电压为-0.8 V,单一的电流增益截止频率(fT)为40 GHz,最大晶振fmax为45 GHz。
Using Ti/Pt/ Au metal system, a good ohmic contact was formed in the process of InPbased HEMT. The low ohmic contact resistance was obtained by optimizing alloy conditions and the titanium/platinum/ gold ohmic contact formation mechanism was deeply discussed. The results show that in N 2 atmosphere at 300 ℃ / 30 s , the obtained minimal ohmic contact resistance is O. 025Ω·mm after rapid thermal annealing, and the alloy interface shape is good. The gate length Lg = 1. 0 μm of InP-based HEMT is fabricated. The testing results show that the devises have good performances of DC and RF, the maximum trans-conductance （G mmax） is 672 mS/ mm, the saturated source leakage current （I DSS） is 900 mA/mm, the threshold voltage of 0. 8 V, while the unity current gain cutoff frequency （fT） and the maximum oscillation frequency （fmax） were 40 and 45 GHz, respectively.
出处
《半导体技术》
CAS
CSCD
北大核心
2014年第3期179-182,192,共5页
Semiconductor Technology
基金
国家自然科学基金资助项目(61274077)
中国博士后基金资助项目(2013T60566
2012M521127)
广西杰出青年基金资助项目(PF130069)
江苏省333工程科研资助项目(BRA2011115)
