摘要
从 3个层面研究了分子束外延 Al0 .48In0 .52 As/ Ga0 .47In0 .53As/ In P功率 HEMT结构材料生长技术。首先 ,通过观察生长过程的高能电子衍射 (RHEED)图谱 ,确立了 Ga0 .47In0 .53As/ In P结构表面层的 MBE RHEED衍射工艺相图 ,据此生长的单层 Si-doped Ga0 .47In0 .53As(40 0 nm) / In P室温迁移率可达 6960 cm2 / V· s及电子浓度 1 .3 3 E1 7cm- 3。其次 ,经过优化结构参数 ,低噪声 Al0 .48In0 .52 As/ Ga0 .47In0 .53As/ In P HEMT结构材料的 Hall参数达到μ30 0 K≥ 1 0 0 0 0 cm2 / V· s、2 DEG≥ 2 .5 E1 2 cm- 2 。最后 ,在此基础之上 ,降低 spacer的厚度、在 Ga0 .47In0 .53As沟道内插入 Si平面掺杂层并增加势垒层的掺杂浓度获得了功率 Al0 .48In0 .52 As/ Ga0 .47In0 .53As/ In PHEMT结构材料 ,其 Hall参数达到μ30 0 K≥ 80 0 0 cm2 / V· s、2 DEG≥ 4 .0 E1 2 cm- 2 。
We have studied the MBE growth technique of Al 0.48In 0.52As/Ga 0.47In 0.53As/InP power HEMT structures from three sides.Firstly,the RHEED process phase diagram of the Ga 0.47In 0.53As/InP structures surface reconstruction was established by observation of RHEED patterns during the layer growth by MBE.The grown Si-doped Ga 0.47In 0.53As(400 nm)/InP's Hall data can reach μ 300K=6 960 cm 2/V·s and n b=1.33E17 cm -3 according to this phase diagram.Secondly,Al 0.48In 0.52As/Ga 0.47In 0.53As/InP low noise HEMT structure's Hall data normally are μ 300K≥10 000 cm 2/V·s and 2DEG≥2.5E12 cm -2 after optimization of structure parameters.Finally,Al 0.48In 0.52As/Ga 0.47In 0.53As/InP power HEMT structure's transport properties can reach μ 300K≥8 000 cm 2/V·s and 2DEG≥4.0E12 cm -2 by reducing spacer thickness,inserting Si planar doping layer in channel and increasing barrier doping level on the bases of low noise HEMT structure.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2003年第2期139-141,158,共4页
Research & Progress of SSE
