摘要
提出了一种含有Al N插入层的新型Al组分渐变的N极性Ga N基高电子迁移率晶体管(HEMT)结构,并通过自洽求解一维薛定谔方程和泊松方程,仿真研究了该新型N极性HEMT结构的二维电子气特性。结果表明采用该新型N极性HEMT结构其体载流子浓度峰值与普通Al组分渐变N极性HEMT结构相比提高了12%。同时定义了Al组分从大到小渐变层和从小到大渐变层厚度之比R及最大值xmax,仿真表明二维电子气面密度随R增大而减小,而xmax超过0.4后二维电子气面密度出现饱和趋势。
The 2-dimensional electron gas （2DEG） in N-polar GaN based high electron mobility transistor （HEMT） with A1N interlayer and new graded M-content, was modeled and simulated by self-consistently solving Schrfidinger and Poisson equations. The impact of the M-depth profile in the MGaN back barrier of N-polar HEMT on the bulk carrier- concentration and 2DEG sheet density was investigated. Here, the thickness-ratio of the M-content decreased layer and M-content increased layer and the maximum ratio were defined as R and x_max, respectively. The calculated results show that the M-graded MN interlayer synthesized with the optimized M-depth profile increase the peak concentration of the bulk cartier of the N-polar HEMT by 12%. As R increases, the 2DEG sheet density sharply decreases, and it slowly reaches saturation after x_max rises up to over 0.4,
出处
《真空科学与技术学报》
EI
CAS
CSCD
北大核心
2014年第12期1341-1346,共6页
Chinese Journal of Vacuum Science and Technology
基金
国家自然科学基金项目(61306113)
