摘要
由于InGaN的物理性质,在传统AlGaN/GaN单异质结中嵌入一定厚度的InGaN层,会使二维电子气的密度提高为原来的近两倍。正是从导带差、极化效应两个方面分析了这种现象的原因,并且通过自洽求解泊松方程和薛定谔方程分别作出了AlGaN/InGaN/GaN双异质结和AlGaN/GaN单异质结的能级图以及2DEG的电子能量图,进一步解释了该现象。
Due to the physical property, the concentration of 2DEG which is in inserting InGaN in AlGaN/GaN SH-heterojunction is nearly twice then AIGaN/GaN. The reason from the offset of conduction band and polarization are nalysed, and the chart of the energy level was drawing by self-consistent solving Poisson equation and Schrodinger equation, the phenomenon is explained by The chart.
出处
《科学技术与工程》
2006年第23期4682-4684,4694,共4页
Science Technology and Engineering
关键词
二维电子气
导带差
极化
自洽求解
2DEG the offset of conduction bandpolarization self-consistent solving process
