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用有限元法讨论光抽运垂直外腔面发射半导体激光器的散热性能 被引量:12

Finite Element Analysis of Thermal Management in Optical Pumping Semiconductor Vertical-External Cavity Surface-Emitting Laser
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摘要 多物理场耦合有限元方法被用来模拟光抽运垂直外腔面发射半导体激光器(OPS-VECSEL)内部的热分布情况,特别对OPS-VECSEL芯片帽层表面与金刚石散热片毛细键合(capillary bond)的情况做了计算。计算表明,在没有金刚石散热片的情况下,从窗口以下首个量子阱到末个量子阱的温差达到150 K;在有金刚石散热片的情况下,器件中各个量子阱的温差很小,其共振波长差只有几纳米;在芯片的分布式布拉格反射镜(DBR)一侧焊接有硅微通道冷却器的情况下,各量子阱间的温差进一步减小,器件性能得到最大改善。模拟计算也表明,在抽运功率不变的情况下,适当增加抽运光的半径,可显著降低器件的热效应,尤其热透镜效应。 Multiphysics finite element analysis was used to simulate the heat distribution in a optical pumping semiconductor vertical-external-cavity surface-emitting laser (OPS-VECSEL). Specially, the VECSEL with a plate of transparent diamond that capillary bond to on cap layer of chip was calculated. Calculation indicate that when there is no diamond piece, the temperature difference between first and the last quantum well is about 150 K. But when the cooler is present, the temperature difference between them is very small as well as the resonale wavelongth difference. In addition to diamond piece, a silicon microchannel cooler soldered onto DBR side of chip ulteriorly decreases the temperature difference between quantum wells and optimizes character of the chip. Simulating calculation also shows that properly increasing the diameter of pumping optical speckle was obviously able to lower the thermal effect, specially the heat lens effect.
出处 《中国激光》 EI CAS CSCD 北大核心 2009年第10期2745-2750,共6页 Chinese Journal of Lasers
基金 重庆市高校光学工程重点实验室重点项目(0705)资助课题
关键词 激光器 多物理场有限元法 半导体激光器 金刚石片 硅微通道冷却器 热管理 lasers multiphysics finite element analysis, semiconductor laser, diamond piece silicon microchannel cooler, thermal management
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参考文献17

  • 1何春凤,李军,秦莉,梁雪梅,路国光,宁永强,王立军.光抽运垂直外腔面发射激光器的光谱特性研究[J].红外与激光工程,2007,36(z1):365-367. 被引量:2
  • 2M. Fallahi, J. V. Moloney, L. Fan. High power verticalexternal-cavity surface-emitting lasers and their applieations[C]. SPIE, 2006, 6127:67-77. 被引量:1
  • 3R. Haring, R. Pasehotta, A. Aschwanden. High-power passively mode-locked semiconductor lasers [J]. IEEE J. Quantum Electron. , 2002 , 38(9) : 1268-1275. 被引量:1
  • 4A. C. Tropper, S. Hoogland. Extended cavity surface-emitting semiconductor lasers[J]. Prog. Quantum Electron. , 2006, 30 (1): 1 -43. 被引量:1
  • 5S. Illek, T. Albrecht, P. Brick et al.. Vertical-external-cavity surface-emitting laser with monolithically integrated pump lasers [J]. IEEE Photon. Technol. Lett., 2007, 19(24): 1952-1954. 被引量:1
  • 6K. Kim, J. Yoo, G. Kim et al.. Enhancement of pumping efficiency in a vertical-external-cavity surface-emitting laser[J]. IEEE Photon. Technol. Lett. , 2007, 12(1) : 19-23. 被引量:1
  • 7陈柏众,戴特力.光泵浦半导体垂直外腔面发射激光器的原理与应用[J].重庆师范大学学报(自然科学版),2008,25(3):62-65. 被引量:6
  • 8H. Lindberg, M. Starassner, E. Gerster et al.. Thermal management of optically pumped long-wavelength InP-based semiconductor disk lasers [J]. IEEE J. Sel. Top. Quantum Electron. , 2005, 11(5): 1126-1134. 被引量:1
  • 9A. J. Kemp, G. J. Valentine, John-Mark Hopkins et al.. Thermal management in vertical-external-cavity surface-emitting lasers: finite-element analysis of a heatspreader approach [J]. IEEE J. Quantum Electron, 2005, 41(2) : 148-155. 被引量:1
  • 10戴特力,梁一平,罗於静.千瓦级连续激光二极管面阵及微沟道冷却组件[J].中国激光,2005,32(5):585-589. 被引量:3

二级参考文献24

  • 1方高瞻,马骁宇,王国宏,谭满清,蓝永生.准连续17kW808nm GaAs/AlGaAs叠层激光二极管列阵[J].中国激光,2004,31(6):649-653. 被引量:9
  • 2何春凤,路国光,单肖楠,秦莉,晏长岭,宁永强,李特,孙艳芳,王立军.高功率980nm垂直外腔面发射激光器(VECSEL)的理论研究[J].光学精密工程,2005,13(3):247-252. 被引量:7
  • 3张冠杰,舒永春,刘如彬,舒强,林耀望,姚江宏,王占国,许京军.光抽运垂直外腔面发射激光器特性与研究进展[J].激光技术,2006,30(4):351-354. 被引量:4
  • 4[1]TROPPER A C,HOOGLAND S.Extended cavity surface-emitting semiconductor lasers[J].Progress in Quantum Electronics,2006,30(1):1-43. 被引量:1
  • 5[2]KUNETSOV F KAKIMI F SPRAGUE R,et al.Design and characteristics of high-power(>0.5W cw)diode pumped vertical external cavity surface emitting semiconductor lasers with circular TEMoo beams[J].Proceedings of IEEE,J Sel,Top,Quantum Electron,1999.5(3):561-573. 被引量:1
  • 6[3]BEYERTTS,BRAUCH U,GIESEHN A,et al.Semiconductor thin disk laser[J].Photonics spectra,2005,(6):61-66. 被引量:1
  • 7戴特力.高功率激光二极管列阵的微通道冷却封装组件[P].中国,发明专利HOIS 5/024,ZL98 1 024664.5(证书号105047).2003-03-19. 被引量:1
  • 8姜薇.千瓦级连续激光二极管面阵专业测试报告[R].成都:中国测试技术研究院,2004.1-4. 被引量:1
  • 9袁祥辉 刘德森 姜薇.千瓦级连续激光二极管面阵项目测试报告[R].重庆:重庆市科委,2004.1-3. 被引量:1
  • 10C. Brent Dane. Bright Future for Compact Tactical Laser Weapons[R]. UCRL-52000-02-4. April 2002. 被引量:1

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