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垂直外腔面发射激光器的模拟分析 被引量:3

Simulation and Analysis of Vertical-external-cavity Surface-emitting Laser
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摘要 垂直外腔面发射激光器芯片的生长工艺要求精确到nm量级,制作成本高,有必要用软件对设计好的VECSEL芯片进行仿真,实现优化。通过PICS3D软件对已经设计好的一个底发射的VECSEL芯片结构进行仿真,获得了量子阱有源区的带隙结构、材料增益曲线及子腔谐振谱线等特性。结果表明,InGaAs/GaAsP/AlGaAs材料体系能够有效地吸收808 nm的泵浦光,产生足够多的光生载流子(电子—空穴对),这些载流子能轻易地渡越应变补偿层,被量子阱俘获,产生复合发光。其发光带隙1.25 eV,相应波长992 nm,接近设计波长980 nm。InGaAs的材料增益峰值波长正好在980 nm处,增益系数高达4 000 cm-1。InGaAs/GaAsP/AlGaAs量子阱的谐振峰值波长为983 nm,与980nm的分布布拉格反射镜(DBR)的反射中心波长非常接近,其峰值功率高达23 dB,理论上能够获得较大的输出功率。 The vertical external cavity surface emitting lasers(VECSELs) require a rigorous facture art from a chip that has been grown in MBE or MOCVD that possess the nm precision and is expensive.It's necessary to firstly simulate the operation of a chip designed in order to get the key parameters and then time after time optimize the structure designing until they are grew.The designed bottom-emitting VECSEL structure was simulated by using pics3d sofeware and the properties of quantum well active region such as bandgap structure,material gain curve,the resonate spectrum and so on were obtained.The results shows that InGaAs/GaAsP/AlGaAs material system is able to absorb effectively the pumped light of wavelength 808 nm and to generate enough carriers(electrons and holes).These carriers would be easily go through the strain complement layers and would be captured by the QWs,and then emitting radiation.These semiconductor laser materials have the bandgap of 1.25 ev corresponding wavelength of 992 nm which is very close to the design wavelength 980 nm.The peak gain wavelength of InGaAs material is right at 980 nm and its gain coefficient is high to 4 000 cm-1.The InGaAs/GaAsP/AlGaAs QW peak emitting wavelength is 983 nm,is very close to the 980 nm DBR center wavelength,and its peak power reach to 23 dB,so the output power should be relative high in theory.
出处 《重庆师范大学学报(自然科学版)》 CAS 2011年第1期55-59,共5页 Journal of Chongqing Normal University:Natural Science
基金 重庆市高校光学工程重点实验室重点项目(No.0705)
关键词 C42+分子 电声耦合 Td对称性 哈密顿量 杨-泰勒畸变 能级分裂 vertical external cavity surface emitting lasers(VECSEL) optical pump multiple quantum well(MQW) resonate periodic gain(RPG)
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  • 1宋晏蓉,郭晓萍,王勇刚,陈檬,李港,于未茗,胡江海,张志刚.新型光泵浦垂直外腔面发射半导体激光器[J].光子学报,2005,34(10):1448-1450. 被引量:8
  • 2张冠杰,舒永春,刘如彬,舒强,林耀望,姚江宏,王占国,许京军.光抽运垂直外腔面发射激光器特性与研究进展[J].激光技术,2006,30(4):351-354. 被引量:4
  • 3倪演海.新型垂直外腔面发射激光器研究[D].重庆:重庆师范大学,2011.1-15. 被引量:3
  • 4Kuznetsov M, Hakimi F, Sprague R, et al. High power (: 0. 5 W CW) diode pumped vertical external cavity surface emitting semiconductor lasers with circular TEMoo beams [J]. IEEE Photon Techn Lett, 1997,9(8) :1063. 被引量:1
  • 5Song Yanrong, Zhang Peng, Tian Jinrong, et al. 1043 nm semiconductor disk laser [C]//High-Powper Diode Laser Technology and Application :. San Francisco, 2010. 被引量:1
  • 6Benno ROsener, Marcel Rattunde, Radiger Moser, et al. GaSb based optically pumped semiconductor disk lasers emitting in the 2. 0 to 2. 8/lm wavelength range[C]//Solid State Lasers XIX:Technology and Devices. San Francisco, 2010. 被引量:1
  • 7Rahim M, Khiar A, Felder F, et al. 4. 5 :m wavelength ver- tical external cavity surface emitting laser operating above room temperature [J]. Appl Phys Lett, 2009,94 : 201112. 被引量:1
  • 8Vurgaftman I, Meyer J R, Ram Mohan L R. Band parame- ters for :I-V compound semiconductors and their alloys [J]. J Appl Phys,2001,98(11) :5815. 被引量:1
  • 9Zhang Peng, Song Yanrong, Zhang Xinping, et al. High power vertical external cavity surface emitting laser [J]. Chinese Optics Lett, 2010,8(4) :40. 被引量:1
  • 10Harkonen A, Suomalainen S, Saarinen E, et al. 4 W single transverse mode VECSEL utilizing intra cavity diamond head spreader[J]. Electron Lett,2006,42(12) :693. 被引量:1

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