摘要
根据脉冲工作状态下半导体激光器激射光谱随结温升高而发生红移的原理,提出了一种测试半导体激光器热弛豫时间的新方法——利用调节取样积分器(Boxcar)取样门,测量光信号脉冲内不同时刻的时间分辨光谱。采用此方法对TO封装和厘米-靶条(cm-Bar)阵列的AlGaAs/GaAs半导体激光器的动态热特性进行了测试,得到其热弛豫时间分别为66μs和96μs。
Based on lasing wavelength red-shift of semiconductor lasers due to junction temperature rising in pulsed operations, time-resolved spectra were measured by adjusting Boxcar gate position related to the current pulse. The thermal relaxation times of TO-can and cm-Bar array AlGaAs laser were obtained to be 66μs and 96μs, respectively. The measured dynamic thermal characteristics are of significance for pumping solid-state lasers.
出处
《中国激光》
EI
CAS
CSCD
北大核心
2006年第12期1671-1674,共4页
Chinese Journal of Lasers
关键词
激光技术
半导体激光器
时间分辨谱
热弛豫时间
laser technique
semiconductor laser
time-resolved spectrum
thermal relaxation time
