New Ge/SiO_2 glasses have been synthesized by heating the GeO_2/SiO_2 dry gels under H_2gas at 700℃. The resulting fluorescence spectra show that this kind of Ge/SiO_2 glasses emit strongphotoluminescence at 392 nm (...New Ge/SiO_2 glasses have been synthesized by heating the GeO_2/SiO_2 dry gels under H_2gas at 700℃. The resulting fluorescence spectra show that this kind of Ge/SiO_2 glasses emit strongphotoluminescence at 392 nm (3.12 eV), medium strong photoluminescence at 600 nm (2.05 eV)and weak photoluminescence at 770 nm (1.60 eV) respectively. Possible photoluminescencemechanisms are also discussed based on the results of X-ray diffraction (XRD) and X-rayphotoelectron spectra(XPS).展开更多
This paper reports that the Ge nanocrystals embedded in SiO2 matrix are grown on Si（100） and quartz-glass substrates, and the formation mechanism is systematically studied by using fluorescence x-ray absorption fine...This paper reports that the Ge nanocrystals embedded in SiO2 matrix are grown on Si（100） and quartz-glass substrates, and the formation mechanism is systematically studied by using fluorescence x-ray absorption fine structure （XAFS）. It is found that the formation of Ge nanocrystals strongly depends on the properties of substrate materials. In the as-prepared samples with Ge molar content of 60%, Ge atoms exist in amorphous Ge （about 36%） and GeO2 （about 24%） phases. At the annealing temperature of 1073 K, on the quartz-glass substrate Ge nanocrystals are generated from crystallization of amorphous Ge, rather than from the direct decomposition of GeO2 in the as-deposited sample. However, on the Si（100） substrate, the Ge nanocrystals are generated partly from crystallization of amorphous Ge, and partly from GeO2 phases through the permutation reaction with Si substrate. Quantitative analysis reveals that about 10% of GeO2 in the as-prepared sample are permuted with Si wafer to form Ge nanocrystals.展开更多
文摘New Ge/SiO_2 glasses have been synthesized by heating the GeO_2/SiO_2 dry gels under H_2gas at 700℃. The resulting fluorescence spectra show that this kind of Ge/SiO_2 glasses emit strongphotoluminescence at 392 nm (3.12 eV), medium strong photoluminescence at 600 nm (2.05 eV)and weak photoluminescence at 770 nm (1.60 eV) respectively. Possible photoluminescencemechanisms are also discussed based on the results of X-ray diffraction (XRD) and X-rayphotoelectron spectra(XPS).
基金Project supported by the National Natural Science Foundation of China （Grant Nos 10605024, 10375059 and 10404023） and Youth Foundation of University of Science and Technology of China （Grant No KA2310000002）. We are grateful to KEK and BSRF for giving us the XAFS beam time.
文摘This paper reports that the Ge nanocrystals embedded in SiO2 matrix are grown on Si（100） and quartz-glass substrates, and the formation mechanism is systematically studied by using fluorescence x-ray absorption fine structure （XAFS）. It is found that the formation of Ge nanocrystals strongly depends on the properties of substrate materials. In the as-prepared samples with Ge molar content of 60%, Ge atoms exist in amorphous Ge （about 36%） and GeO2 （about 24%） phases. At the annealing temperature of 1073 K, on the quartz-glass substrate Ge nanocrystals are generated from crystallization of amorphous Ge, rather than from the direct decomposition of GeO2 in the as-deposited sample. However, on the Si（100） substrate, the Ge nanocrystals are generated partly from crystallization of amorphous Ge, and partly from GeO2 phases through the permutation reaction with Si substrate. Quantitative analysis reveals that about 10% of GeO2 in the as-prepared sample are permuted with Si wafer to form Ge nanocrystals.
