摘要
用射频共溅射技术和后退火的方法,制备出埋入SiO2基质中的Ge纳米晶复合膜(ncGe/SiO2)。用XRD对薄膜的晶体结构进行了测试,未经退火的样品呈现非晶状态,600℃退火后的薄膜中开始有Ge纳米晶粒出现。研究了薄膜的Raman散射光谱,发现了其红移和宽化现象。测量了薄膜的光致发光谱,所有样品都在394nm处发出很强的光,随着Ge纳米晶粒的出现,样品有310nm和625nm处的光发出,其强度随晶粒平均尺寸的增大而增强。
Ge nanocrystals embedded in SiO2 thin films have been prepared by RF co-sputtering technique and post-annealing treatment. The element analysis of films was carried out by the aid of XRD. The films have the patterns of typical amorphous structure without annealing. When annealing at the temperature higher than 600℃,Ge nanocrystals appeared in the films. Raman scattering of samples was studied. A red shift and broadening of the Raman peak were observed. Photoluminescence(PL) spectrums of samples were measured. All samples emit a strong band centered at 394nm. With the formation of Ge nanocrystals, the samples exhibit another two bands with the peaks respectively at 310nm and 625nm, and their intensity increases with the size of Ge nanocrystals.
出处
《太原科技大学学报》
2005年第2期136-139,共4页
Journal of Taiyuan University of Science and Technology
基金
山西省自然科学基金资助项目(20041073)
