摘要
采用微波等离子体化学气相沉积法,利用CH4、SiO2和Ar的混合气体在单晶硅片基底上制备出高质量的超纳米金刚石薄膜。表征结果显示,制备的薄膜致密而均匀,晶粒平均尺寸约7.47nm,表面粗糙度约15.72nm,并且其金刚石相的物相纯度相对较高,是质量优异的超纳米金刚石薄膜材料。
High-quality ultrananocrystalline diamond film is prepared on single crystal Si with Ar,CH4 ,CO2 using microwave plasma chemical vapor deposition（MPCVD） technology. The results show that the high-quality thin film is compact and homogeneous, and its average crystalline grains and surface roughness are nearly 7. 47nm and 15. 72nm, respectively. And the film aslo has a higher diamond phase purity.
出处
《材料导报》
EI
CAS
CSCD
北大核心
2009年第14期54-56,共3页
Materials Reports
基金
国家自然科学基金(10876032)
国家863计划强辐射重点实验室基金(20070202)
