摘要
Ge纳米晶嵌入高k介质中既可以提高器件的可靠性又可以降低写入电压和提高存储速度。本实验主要研究了用于非挥发存储器的含有Ge纳米晶MIS结构的电荷存储特性。MIS结构由电子束蒸发的方法制备,包括Al2O3控制栅,Al2O3中Ge纳米晶和Al2O3隧道氧化层。这种MIS结构在1MHz下的C-V特性表现出良好的电学性能,平带电压漂移为0.96V,电荷存储密度达到4.17×1012cm-2。不同频率下Ge纳米晶在Al2O3介质中电荷存储特性随着频率的增加,平带电压的漂移和存储的电荷数减小。随着扫描速率的增加,平带电压的漂移和存储电荷也减小。
Ge nanocrystal memory device can be programmed at a relatively low voltage and high speed. This research studies charge storage characterization of non - volatile memory metal insulator silicon （MIS） structures with Ge nanocrystal floating gate. The MIS structure containing Al2O3 control gate, a Ge nanocrystal -embedded Al2O3 dielectric and a Al2O3 tunnel oxide layer, was fabricated by electronbeam evaporation method. Capacitance - voltage （ C - V） measurements at 1 MHz revealed promising electrical characteristics of the MIS structure. The flat - band voltage shift （ △VFB ） is 0.96V and relatively high stored charge density （Nt） of 4.17× 10^12 cm^-2 is achieved. △VFB and N, become small when the frequency varies from 1 kHz to 1 MHz. They also decrease when the voltage scan velocity degrades.
出处
《功能材料与器件学报》
EI
CAS
CSCD
北大核心
2007年第2期145-149,共5页
Journal of Functional Materials and Devices
基金
中国科学院资助项目(No.Y2005027)
上海市科委项目(No.0452nm012
04DZ05612
04ZR14154
04JC14080
05JC14076
AM0414
05nm05043
AM0517)资助.
关键词
Ge纳米晶
高k介质
C-V曲线
Ge nanocrystal
high - k gate dielectrics
C - V curve
