摘要
采用离子注入法及退火工艺,在硅基二氧化硅薄膜中制备了镶嵌结构的天然Ge纳米晶样品.通过退火实验研究,发现随着退火温度的升高,纳米晶的晶态峰峰位红移,这意味着Ge纳米晶受到的应力减小.当退火温度达到700℃时,纳米晶的晶态峰强度显著增强,而且薄膜中与Ge有关的缺陷发光减弱.采用中子嬗变掺杂法对天然Ge纳米晶进行了掺杂,X射线荧光光谱数据表明,样品中成功的引入了Ga杂质和As杂质.薄膜中形成的与Ge有关的缺陷具有稳定的结构,中子辐照之后其发光仍然存在,而且,掺杂后的样品中没有发现与Ga或As有关的缺陷发光.
Natural Ge nanocrystals embedded in SiO2 film were fabricated by ion-implantation and subsequent annealing. With increasing annealing temperature, the Raman peak of Ge nanocrystals red-shifts to lower wave numbers which indicates less stress around Ge nanocrystals. When annealed at 700℃, Ge nanocrystals grew faster and the photoluminescence related to defects decreased. Ga and As impurities could be introduced to nanocrystals by neutron transmutation doping method. The luminescence from Ge-related defects could be observed before and after neutron irradiation, which means that this kind of defect has a stable structure. No new color center was found in the sample after neutron transmutation doping.
出处
《四川大学学报（自然科学版）》
CAS
CSCD
北大核心
2011年第3期651-654,共4页
Journal of Sichuan University(Natural Science Edition)
基金
国家自然科学基金委员-中国工程物理研究院联合基金(10376020)
关键词
天然Ge纳米晶
中子嬗变掺杂
拉曼光谱
X射线荧光光谱
Natural Ge nanocrystals, neutron transmutation doping, Raman spectrum, X-ray fluorescence spectrum
