摘要
介绍了非对称性势垒单电子管(ATBs)的电路模拟和特性,以及采用准经典的Monte Carlo方法对Ge/Si复合纳米结构MOSFET存储器的电路模拟,得出由于台阶状复合势垒的作用,在擦写时间保持μs和ms量级的同时,存储时间可长达数年.从而解决了快速编程与长久存储之间的矛盾.
In this paper,the property and circuit simulation of the Single Electron Device based on Asymmetric Tunnel Barriers, and the Ge/Si nanocrystal MOSFET memory with the Monte Carlo method in quasic classical approximation are introduced. It is demonstrated that the proposed device can achieve the programming in the order of/~s or ms owing to the hetero-energy bands, and the retention time is increased to several years at the same time. Hence the conflict between high speed programming and long retention can be efficiently resolved.
出处
《湖南工程学院学报（自然科学版）》
2006年第1期12-15,共4页
Journal of Hunan Institute of Engineering(Natural Science Edition)
关键词
非对称势垒
复合纳米结构
单电子存储器
电路模拟
asymmetric tunnel barrier
Ge/Si nanocrystal structure
slngle-electron memory
circuit simulation
