The relation between threshold voltage for hydrogenated amorphous silicon thin film transistors (a-Si:H TFTs) and deposition conditions for hydrogenated amorphous silicon nitride (a-SiN x :H) films is investig...The relation between threshold voltage for hydrogenated amorphous silicon thin film transistors (a-Si:H TFTs) and deposition conditions for hydrogenated amorphous silicon nitride (a-SiN x :H) films is investigated.It is observed that the threshold voltage, V th ,of a-Si:H TFT increases with the increase of the thickness of a-SiN x :H film,and the threshold voltage is reduced apparently with the increase of NH 3/SiH 4 gas flow rate ratio.展开更多
报道了在采用 L PCVD法制备的富硅 Si Nx 膜中发现的部分晶化的硅镶嵌微结构 .视生长条件和工艺不同 ,该结构的尺度范围从数十到几百纳米不等 .利用不同条件下生长的 Si Nx 膜的应力测试结果和透射电镜观测结果 ,分析了富硅型 Si Nx 膜...报道了在采用 L PCVD法制备的富硅 Si Nx 膜中发现的部分晶化的硅镶嵌微结构 .视生长条件和工艺不同 ,该结构的尺度范围从数十到几百纳米不等 .利用不同条件下生长的 Si Nx 膜的应力测试结果和透射电镜观测结果 ,分析了富硅型 Si Nx 膜的微结构的成因及其与膜内应力之间的相互影响 ,对富硅型 Si Nx 膜的 L PCVD生长工艺进行优化 ,大大降低了膜的张应力 ,无支撑成膜面积可达 4 0 m m× 4 0 mm.通过这一研究结果 ,实现了 L PCVD可控制生长确定张应力的 Si Nx展开更多
文摘The relation between threshold voltage for hydrogenated amorphous silicon thin film transistors (a-Si:H TFTs) and deposition conditions for hydrogenated amorphous silicon nitride (a-SiN x :H) films is investigated.It is observed that the threshold voltage, V th ,of a-Si:H TFT increases with the increase of the thickness of a-SiN x :H film,and the threshold voltage is reduced apparently with the increase of NH 3/SiH 4 gas flow rate ratio.
文摘报道了在采用 L PCVD法制备的富硅 Si Nx 膜中发现的部分晶化的硅镶嵌微结构 .视生长条件和工艺不同 ,该结构的尺度范围从数十到几百纳米不等 .利用不同条件下生长的 Si Nx 膜的应力测试结果和透射电镜观测结果 ,分析了富硅型 Si Nx 膜的微结构的成因及其与膜内应力之间的相互影响 ,对富硅型 Si Nx 膜的 L PCVD生长工艺进行优化 ,大大降低了膜的张应力 ,无支撑成膜面积可达 4 0 m m× 4 0 mm.通过这一研究结果 ,实现了 L PCVD可控制生长确定张应力的 Si Nx
