摘要
在太阳电池表面形成一层减反射薄膜是提高太阳电池的光电转换效率比较可行且降低成本的方法。应用PECVD(等离子体增强化学气相沉积)系统,采用SiH4和NH3气源以制备氮化硅薄膜。研究探索了PECVD生长氮化硅薄膜的基本物化性质以及在沉积过程中反应压强、反应温度、硅烷氨气流量比和微波功率对薄膜性质的影响。通过大量实验,分析了氮化硅薄膜的相对最佳沉积参数,并得出制作减反射膜的优化工艺。
Depositing antireflection films on solar cells is the most doable way to improve conversion efficiency of solar cells,which can also debase the cost of solar cells.The PECVD（Plasma Enhanced Chemical Vapor Deposition） system and the reactants of silane and ammonia are applied to fabricating SiN thin film.The effects of reaction temperature,the flow ratio of silane over ammonia and the microwave power on the film character are researched.The effects of post deposition annealing on solar cell materials are also discussed primarily.The optimal relative deposition parameters are investigated and the optimized processes of antireflection fabrication are attained with plenty of experienments.
出处
《现代电子技术》
2011年第12期145-147,151,共4页
Modern Electronics Technique
基金
国家自然科学基金资助项目(60976020)
陕西省教育厅基金资助项目(112Z051)
