摘要
文中研制了一种基于微机电系统(MEMS)技术的硅压阻式绝缘体上硅(SOI)高温压力芯片。从压力芯片结构设计、关键尺寸计算以及有限元分析等方面考虑,对压力芯片可动膜片进行了结构优化;从压敏电阻条的注入位置、几何形状、器件噪声分析和计算等方面设计,确定了压敏电阻条的最优尺寸;压力芯片采用薄膜隔离充油封装工艺,通过设计创新金丝焊接路径、工艺及方法,金丝抗拉强度提升了1倍。性能测试结果表明,研制的高温压力芯片量程为0~1 MPa,室温条件下满量程输出大于90 mV,线性度优于±0.1%FS,重复性优于±0.01%FS。在-55~150℃温度范围内,高低温漂移均优于±0.01%FS/℃。100000次高低压交变循环试验后,传感器零点和满量程漂移优于±0.1%FS。
Based on the micro electro mechanical system(MEMS)technology,a piezoresistive SOI high temperature pressure chip was proposed.Considering the structure design,key dimension calculation and finite element analysis of the pressure chip,the structure of the movable membrane of the pressure chip was optimized.The optimized dimensions of the piezoresistors were determined,from designing the implantation position of the piezoresistors,the geometry shape,the analysis and calculation of the device noise,etc.The pressure chip adopted the film isolation oil-filled sealing process.Through the design and innovation of the gold wire welding path,process and method,the tensile strength of the gold wire was doubled.The test results show that the range of the high temperature pressure chip is 0~1 MPa,the full range output at room temperature is more than 90 mV,the linearity is better than±0.1%FS,and the repeatability is better than±0.01%FS.Within the temperature range of-55~150℃,both high and low temperature drifts are better than±0.01%FS/℃.After 100000 times of the pressure alternating cycle test,the zero and full scale drifts are better than±0.1%FS.
作者
李闯
涂孝军
温学林
LI Chuang;TU Xiaojun;WEN Xuelin(AVIC Suzhou Changfeng Avionics Co.,Ltd,Suzhou 215151,China;Soochow University,Suzhou 215131,China)
出处
《仪表技术与传感器》
CSCD
北大核心
2023年第8期7-14,共8页
Instrument Technique and Sensor
基金
中航航空电子“十四五”核心竞争力创新项目(YC2228)。
关键词
高温压力芯片
芯片设计
芯片封装
高精度
稳定性
high temperature pressure chip
chip design
chip packaging
high accuracy
stability
