摘要
在SOI晶圆材料的基础上,设计了压力敏感结构,提高了传感器的高温稳定性;采用敏感芯片背孔引线技术,将硅敏感芯片的正面和硼玻璃进行气密性阳极键合,通过在硼玻璃对应位置加工电极连接孔,实现芯片电极与外部管脚的电气连接,形成无引线封装结构;利用ANSYS软件对敏感芯片进行了力学仿真,对高温敏感芯体进行了热应力分析,完成了无引线封装结构的优化及制作。通过性能测试,该传感器测量范围为0~0.2 MPa,灵敏度为55.0 m V/MPa,非线性误差小于0.2%。
The structure of the pressure sensitive chip based on SOI wafer material was designed.SOI was applied to improve the stability of the sensor.The technology of the novel pressure sensor with back-side direct exposure packaging was presented. A hermetical connection between the active side of the Si-wafer and the glass cover was realized by anodic bonding.Sealed throughglass was drilled in the right site of the glass capping.Then the vias connected pads on the front side of Si-wafer with electrodes of the sensor header.This process formed the leadless packaging. The mechanical simulation of the sensitive chip and the thermal stress of high-temperature sensitive core was analyzed by ANSYS software.The optimization and the fabrication of leadless packaging were completed upon the simulation results.After performance test,the measuring range of the sensor is 0 ~ 0.2 MPa,the sensitivity is 55.0 m V/MPa,and the nonlinear error is less than 0.2%.
出处
《仪表技术与传感器》
CSCD
北大核心
2017年第12期20-24,共5页
Instrument Technique and Sensor
