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保温时间对ZnO压敏陶瓷电学性能的影响

Effects of sintering time on electrical properties of ZnO varistor ceramics
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摘要 采用固相烧结法制备了ZnO-Pr_(6)O_(11)-Co_(2)O_(3)-Cr_(2)O_(3)-Er_(2)O_(3)-SiO_(2)压敏陶瓷,并研究了保温时间对ZnO压敏陶瓷的物相、微观形貌、压敏特性和阻抗特性等的影响。结果表明:随着保温时间变长,平均晶粒尺寸逐渐增大。保温3 h的ZnO压敏陶瓷综合性能最好,非线性系数和晶界势垒高度均达到最大,分别为16.9和0.37 eV,击穿场强和晶界电阻率分别为384.3 V/mm和17400 MΩ·cm,且漏电流最小,为1μA。同时,晶界处带负电的Zn_(1.9)SiO_(4)相的存在对晶粒间双肖特基势垒的形成有重要影响。 The ZnO-Pr_(6)O_(11)-CO_(2)O_(3)-Cr_(2)O_(3)-Er_(2)O_(3)-SiO_(2)varistors were prepared by solid state sintering method.The effect of sintering time on the phase,microstructure,varistor property,and impedance characteristic of the ZnO varistors was studied in detail.The results show that the grain size increases gradually with the continuous increase of sintering time.It was found that the ZnO varistor with the sintering time of 3 h has the best comprehensive performance to provide overvoltage protection for circuit,which has the largest nonlinear coefficient of 16.9,the largest barrier height of grain boundary of 0.37 eV,the breakdown voltage of 384.3 V/mm,the resistivity of grain boundary of 17400 MΩ·cm,and the lowest leak current of 1μA,respectively.Also,the existence of the negatively charged Zn_(1.9)SiO_(4)phase at the grain boundary has an important influence on the formation of duble Schottky barrier between the grains.
作者 朱桥 曹文斌 ZHU Qiao;CAO Wenbin(Semiconductor Materials and Devices Research Center,School of Arts and Sciences,Shaanxi University of Science&Technology,Xi'an 710021,China)
出处 《功能材料》 CAS CSCD 北大核心 2023年第6期6141-6145,共5页 Journal of Functional Materials
基金 国家自然科学基金项目(51802183)。
关键词 氧化锌压敏陶瓷 保温时间 微观结构 压敏性能 zinc oxidevaristor sintering time microstructure varistor property
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