摘要
研究了升温速率对ZnO-Bi_(2)O_(3)-Sb_(2)O_(3)-Co_(2)O_(3)-MnO_(2)-Cr_(2)O_(3)-SiO_(2)压敏陶瓷微观结构和电学性能的影响。当升温速率从3℃/min降低到1.5℃/min时,ZnO晶粒快速长大导致样品结构均匀性变差。当升温速率从3℃/min升高到10℃/min时,缺陷扩散变弱导致双Schottky势垒形成受阻。升温速率为3℃/min时,样品的非线性系数为最大值43.4,漏电流为最小值1.0μA/cm2,击穿场强为448 V/mm,三者的标准偏差达到最小,样品稳定性最好,200 Hz~2 MHz电场作用下损耗角正切tanδ小于0.03,综合电学性能最优。同时,晶界处带负电的富Bi相Bi_(3.73)Sb_(0.27)O_(6.0+x)的存在对ZnO压敏陶瓷的电学性能有重要影响。
The effect of heating rate on the microstructure and electrical properties of ZnO-Bi_(2)O_(3)-Sb_(2)O_(3)-Co_(2)O_(3)-MnO_(2)-Cr_(2)O_(3)-SiO_(2) varistors was investigated.ZnO grains grow rapidly with decreasing the heating rate from 3 ℃/min to 1.5 ℃/min,resulting in the deterioration of the uniformity of the sample structure.When the heating rate increases from 3 ℃/min to 10 ℃/min,the defect diffusion becomes weakly,hindering the formation of the double Schottky barrier.When the heating rate is 3 ℃/min,the maximum nonlinear coefficient of the sample is 43.4,the minimum leakage current is 1.0 μA/cm2,the voltage gradient is 448 V/mm,the standard deviation is the minimum,and the stability of the sample is the optimum.The loss tangent tanδ under the action of an electric field at 200 Hz-2 MHz is less than 0.03.The optimum overall electrical performance of ZnO varistor can be obtained at a heating rate of 3 ℃/min.Also,the existence of the negatively charged a Bi-rich phase(i.e.,Bi_(3.73)Sb_(0.27)O_(6.0+x)) at the grain boundary has an influence on the electrical properties of ZnO varistors.
作者
曹文斌
苏锦锋
刘建科
陈姣姣
乔毅楠
CAO Wenbin;SU Janeen;LIU Jianke;CHEN Jiaojiao;QIAO Yinan(Research Center for Semiconductor Materials and Devices,Shaanxi University of Science and Technology,Xi′an 710021,China)
出处
《硅酸盐学报》
EI
CAS
CSCD
北大核心
2021年第12期2615-2620,共6页
Journal of The Chinese Ceramic Society
基金
国家自然科学基金(51802183)资助。
