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溶胶-凝胶法制备Y_2O_3掺杂ZnO压敏薄膜及其电性能(英文)

Sol-gel synthesis of Y_2O_3-doped ZnO thin films varistors and their electrical properties
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摘要 研究溶胶-凝胶法制备不同浓度Y2O3掺杂对ZnO-Bi2O3压敏薄膜微观结构和电性能的影响。研究结果表明:Y2O3掺杂ZnO薄膜在750°C空气气氛下退火1h,ZnO薄膜的特征峰与ZnO的六方纤锌矿结构相匹配;ZnO晶粒直径随着掺杂量的增加而减小,Y2O3稀土掺杂氧化锌晶粒细化;薄膜厚度均匀且每一层厚度约80nm。研究结果还表明:当Y3+掺杂浓度为0.2%(摩尔分数)时,ZnO薄膜的非线性伏安特性最好,其漏电流为0.46mA,电位梯度为110V/mm,非线性系数为3.1。 研究溶胶-凝胶法制备不同浓度Y2O3掺杂对ZnO-Bi2O3压敏薄膜微观结构和电性能的影响。研究结果表明:Y2O3掺杂ZnO薄膜在750°C空气气氛下退火1h,ZnO薄膜的特征峰与ZnO的六方纤锌矿结构相匹配;ZnO晶粒直径随着掺杂量的增加而减小,Y2O3稀土掺杂氧化锌晶粒细化;薄膜厚度均匀且每一层厚度约80nm。研究结果还表明:当Y3+掺杂浓度为0.2%(摩尔分数)时,ZnO薄膜的非线性伏安特性最好,其漏电流为0.46mA,电位梯度为110V/mm,非线性系数为3.1。
出处 《中国有色金属学会会刊:英文版》 CSCD 2012年第S1期110-114,共5页 Transactions of Nonferrous Metals Society of China
基金 Projects (BK2011243, BK2012156) supported by the Natural Science Foundation of Jiangsu Province, China Project (EIPE11204) supported by the State Key Laboratory of Electrical Insulation and Power Equipment, China Project (KF201104) supported by the State Key Laboratory of New Ceramic and Fine Processing, China Project (KFJJ201105) supported by the Opening Project of State key Laboratory of Electronic Thin Films and Integrated Devices, China Project (10KJD430002) supported by the Universities Natural Science Research Project of Jiangsu Province,China Project (CJ20120058) supported by the Application Program for Basic Research of Changzhou, China Project (11JDG084) supported by the Research Foundation of Jiangsu University, China
关键词 氧化锌 Y2O3压敏 薄膜 溶胶-凝胶法 电性能 显微组织 zinc oxide Y2O3 varistor film sol-gel process electrical properties microstructure
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参考文献17

  • 1Zhen-hong Wu,Jian-hui Fang,Dong Xu,Qin-dong Zhong,Li-yi Shi.Effect of SiO_2 addition on the microstructure and electrical properties of ZnO-based varistors[J].International Journal of Minerals,Metallurgy and Materials,2010,17(1):86-91. 被引量:19
  • 2Gupta T K.Application of zinc oxide varistors. Journal of the American Ceramic Society . 1990 被引量:1
  • 3Slavko Bernik,Sreco Macek,Bui Ai.Microstructural and elec-trical characteristics of Y2O3-doped ZnO-Bi2O3-based varistor ce-ramics. Journal of the European Ceramic Society . 2001 被引量:1
  • 4BERNIK S,MACEK S,BUI A.The characteristics of ZnO-Bi2O3-based varistor ceramics doped with Y2O3 and varying amounts of Sb2O3. Journal of the European Ceramic Society . 2004 被引量:1
  • 5Nahm C W.Effect of cooling rate on degradation characteristics of ZnO Pr6O11CoO Cr2O3Y2O3-based varistors. Solid State Communications . 2004 被引量:1
  • 6C. W. Nahm,B. C. Shin.Effect of sintering time on electrical properties and stability against DC accelerated aging of Y2O3-doped ZnO-Pr6O11-based varistor ceramics. Ceramics International . 2004 被引量:1
  • 7Nahm C W,Shin B C.Highly stable nonlinear properties of ZnO-Pr6O11-CoO-Cr2O3-Y2O3-based varistor ceramics. Materials Letters . 2003 被引量:1
  • 8BERNIK S,ZUPANC P,KOLAR D.Influence of Bi2O3/TiO2, Sb2O3 and Cr2O3 doping on low-voltage varistor ceramics. Journal of the European Ceramic Society . 1999 被引量:1
  • 9XU D,SHI L Y,WU Z H,ZHONG Q D,WU X X.Microstructure and electrical properties of ZnO-Bi2O3-based varistor ceramics by different sintering processes. Journal of the European Ceramic Society . 2009 被引量:1
  • 10JIANG S L,ZHANG H B,HUANG Y Q,LIU M D,LIN R Z.Effect of annealing temperature of a novel sol-gel process on the electrical properties of low voltage ZnO-based ceramic films. Journal of Materials Science . 2005 被引量:1

二级参考文献22

  • 1D.R.Clarke,Varistor ceramics,J.Am.Ceram.Soc,82(1999),p.485. 被引量:1
  • 2D.Xu,L.Shi,Z.Wu,et al.,Microstructure and electrical properties of ZnO-Bi_2O_3-based varistor ceramics by different sintering processes,J.Eur.Ceram.Soc.,29(2009),p.1789. 被引量:1
  • 3M.Matsuoka,Nonohmic properties of zinc oxide ceramics,Jpn.J.Appl.Phys.,10(1971),p.736. 被引量:1
  • 4T.K.Gupta,Applications of zinc oxide ceramics,J.Am.Ceram.Soc.,73(1990),p.1817. 被引量:1
  • 5T.Takemura,M.Kobayashi,Y.Takada,and K.Sato,Effects of antimony oxide on the characteristics of ZnO varistors,J.Am.Ceram.Soc.,70(1987),p.237. 被引量:1
  • 6E.Olsson and G.L.Dunlop,The effect of Bi_2O_3 content on the microstructure and electrical properties of ZnO varistor materials,J.Appl.Phys.,66(1989),p.4317. 被引量:1
  • 7M.Peiteado,M.A.De,M.J.Velasco,et al.,Bi_2O_3 vaporization from ZnO-based varistors,J.Eur.Ceram.Soc.,25(2005),p.675. 被引量:1
  • 8C.C.Lin,W.S.Lee,C.C.Sun,and W.H.Whu,The influences of bismuth antimony additives and cobalt manganese dopants on the electrical properties of ZnO-based varistors,Compos.Part B,38(2007),p.338. 被引量:1
  • 9S.G.Cho,H.Lee,and H.S.Kim,Effect of chromium on the phase evolution and microstructure of ZnO doped with bismuth and antimony,J.Mater.Sci.,32(1997),p.4283. 被引量:1
  • 10K.O.Magnusson and S.Wiklund,Interface formation of Bi on ceramic ZnO:a simple model varistor grain boundary,J.Appl.Phys.,76(1994),p.7405. 被引量:1

共引文献18

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