摘要
影响铜锌锡硒(CZTSe)薄膜太阳能电池光伏性能的因素众多,仿真研究各种因素对器件性能的影响规律是提高器件效率的有效途径.基于实际制备的CZTSe电池器件,采用SCAPS太阳能电池仿真软件对该电池的J-V特性进行拟合,分别考查了串/并联电阻、体相缺陷态密度和界面缺陷态密度对CZTSe器件性能的影响,综合分析了限制器件性能的主要因素和提升器件效率的有效途径.研究结果对于制备高效率CZTSe太阳能电池具有一定的指导意义.
There are many factors affecting the photovoltaic performance of copper zinc tin selenium(CZTSe)thin film solar cells.Studying the influence law of various factors on the device performance through simulation is an effective way to improve the device conversion efficiency.Based on a prepared CZTSe solar cell,the J-Vcurve is fitted by using a simulation software SCAPS for solar cells,and the effects of series/parallel resistance,bulk defect state density and interface defect state density on the performance of CZTSe devices are investigated,respectively.The main factors that limit the device performance and the effective approaches to improve the device efficiency are comprehensively analyzed.These results have practical guiding significance for the preparation of highly efficient CZTSe solar cells.
作者
方奕锟
谈晓辉
韩修训
FANG Yi-kun;TAN Xiao-hui;HAN Xiu-xun(Institute of Optoelectronic Materials and Devices,Faculty of Materials Metallurgy and Chemistry,Jiangxi Universityof Science and Technology,Ganzhou 341000,Jiangxi,China)
出处
《西北师范大学学报（自然科学版）》
CAS
北大核心
2022年第3期37-42,115,共7页
Journal of Northwest Normal University(Natural Science)
基金
江西省自然科学基金资助项目(20192ACB20006)
江西理工大学人才启动基金资助项目。
