摘要
室温下,采用射频磁控溅射氧化锌(ZnO)粉末靶和铜(Cu)靶,在玻璃衬底上制备ZnO/Cu/ZnO透明导电薄膜。通过改变Cu层厚度,研究其对ZnO/Cu/ZnO薄膜光电性能的影响。结果表明:ZnO/Cu/ZnO表面相对平整,结晶程度较好,在可见光范围内,当Cu厚度为11 nm和14 nm时,ZnO/Cu/ZnO薄膜的最高透光率分别为79%和74%;当Cu厚度为14 nm时,其载流子浓度及带电粒子运动能力分别为4.85×10^(21)cm^(-3)和6.73 cm^(2)·V^(-1)·s^(-1)。与ZnO/Ag/ZnO薄膜相比,ZnO/Cu/ZnO需要更厚的铜薄膜才能连续,而具有较薄Ag层的ZnO/Ag/ZnO有比ZnO/Cu/ZnO更优良的光电性能。
At room temperature,ZnO/Cu/ZnO transparent conductive films were prepared on glass substrate by radio frequency magnetron sputtering of zinc oxide(ZnO)powder and copper(Cu)targets.The effect of the thickness of Cu layer on the photoelectric properties of ZnO/Cu/ZnO thin film were studied.The results showed that the surface of ZnO/Cu/ZnO films were relatively flat and had a good degree of crystallinity;in the visible light range,when the thicknesses of Cu are 11 nm and 14 nm,the achieved highest transmittance of ZnO/Cu/ZnO films were 79%and 74%;when the thickness of Cu is 14 nm,carrier concentration and the motion ability of charged particles are 4.85×10^(21)cm^(-3)and 6.73 cm^(2)·V^(-1)·s^(-1)respectively.Compared with ZnO/Ag/ZnO films,ZnO/Cu/ZnO required a thicker copper film to be continuous.ZnO/Ag/ZnO with a thinner Ag layer has better optoelectronic performance than ZnO/Cu/ZnO.
作者
李彤
赵卓
武俊生
方方
周艳文
LI Tong;ZHAO Zhuo;WU Junsheng;FANG Fang;ZHOU Yanwen(School of Chemistry Engineering,University of Science and Technology Liaoning,Anshan 114051,Liaoning,China;Institute of Surface Engineering,University of Science and Technology Liaoning,Anshan 114051,Liaoning,China)
出处
《材料导报》
EI
CAS
CSCD
北大核心
2022年第6期70-73,共4页
Materials Reports
基金
国家自然科学基金(51672119,51972155)。
关键词
透明导电薄膜
粉末靶
射频磁控溅射
光电薄膜
transparent conductive film
powder target
RF magnetron sputtering
thin-film photovoltaics
