摘要
基于GaAs赝配高电子迁移率晶体管(PHEMT)工艺,研制了一款0.8~2.7 GHz的高线性驱动放大器。电路放大部分采用多胞合成技术,避免了工艺对栅宽的限制,同时可以提升输入和输出阻抗。偏置电路采用带负反馈系统的有源镜像结构实现,与传统的有源偏置结构相比,引入一个负反馈系统,提高了驱动能力,使电路更加稳定。电路采用+5 V电源供电,静态工作电流为130 mA。该放大器在860~960 MHz、2.1~2.2 GHz和2.3~2.7 GHz性能良好,在2.6 GHz处的小信号增益为14.3 dB,1 dB压缩点输出功率(Po(1 dB))为28.4 dBm,Po(1 dB)处的功率附加效率为41.6%,输出三阶交调点为37.5 dBm。采用片外匹配,不仅节省芯片面积,还可以通过调整输入和输出匹配网络,满足5G基站等移动通信系统不同频段的应用需求。
A high linearity driver amplifier operating from 0.8 GHz to 2.7 GHz was designed and fabricated based on the GaAs pseudomorphic high electron mobility transistor(PHEMT)process.The multi-cell synthesis technology was adopted in the amplifying part of the circuit to avoid the process limitation of gate width,and the input and output impedance can be improved.The bias circuit was realized by an active current mirror structure with a negative feedback system.Compared with traditional active bias structures,the introduction of a negative system can improve the driving capability and stability of the circuit.The amplifier adopts+5 V power supply while consuming 130 mA quiescent current.The amplifier performs well in 860-960 MHz,2.1-2.2 GHz and 2.3-2.7 GHz,and exhibits a small signal gain of 14.3 dB,an output power at 1 dB compression point(Po(1 dB))of 28.4 dBm,a power added efficiency at Po(1 dB)of 41.6%and an output third order intercept point of 37.5 dBm at 2.6 GHz.The adoption of external matching reduces the chip size,and can meet the application requirements of different frequency bands in 5 G base station and other mobile communication systems by adjusting the input and output matching network.
作者
张欢
张昭阳
张晓朋
高博
Zhang Huan;Zhang Zhaoyang;Zhang Xiaopeng;Gao Bo(North-China Integrated Circuit Co.,Ltd.,Shijiazhuang 050200,China;The 13 th Research Institute,CETC,Shijiazhuang 050051,China)
出处
《半导体技术》
CAS
北大核心
2020年第11期850-855,885,共7页
Semiconductor Technology
