摘要
利用0.2μmGaAsPHEMT工艺研制了40Gb/s光通信系统中的光调制器驱动放大器。该放大器芯片采用有源偏置的七级分布放大器结构,工作带宽达到40GHz,输入输出反射损耗约-10dB,功率增益14dB,功耗700mW,最大电压输出幅度达到7V。两级芯片级连后,功率增益约27dB,在40Gbit/s速率下得到清晰的眼图。
： We realized a dc-40 GHz driver amplifier for 40 Gb/s optical communication sys- tem using 0.2μm GaAs PHEMT technology. The amplifier using seven stage distribute topology has following performances： dc-40 GHz extra-broadband, input and output VSWR below -10 dB, power gain higher than 14 dB, maximum output voltage larger than 7 V and power dissipation lower than 700 roW. Using two chips cascade connection the amplifier can get 27 dB power gain, and clear eye diagram at 40 Gbit/s rate.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2006年第3期335-339,共5页
Research & Progress of SSE
