摘要
针对航空航天和卫星通信等设备的需求,介绍了一款超宽带延时幅相控制多功能芯片。该芯片集成了数字和微波电路,有T/R开关、5位数控延时器（10 ps步进TTD）、5位数控衰减器（1 d B步进ATT）、2个行波放大器、均衡器及数字电路。基于GaAs E/D PHEMT工艺研制出了芯片实物,芯片尺寸为4.5 mm×5.0 mm×0.07 mm。采用微波在片测试系统对该幅相控制多功能芯片进行了实际测试,在3~17 GHz频段内实现了10~310 ps延时范围,1~31 d B衰减范围。测试结果显示,发射/接收增益大于2 d B,发射1 d B压缩输出功率P1 d B_Tx大于12 d Bm,接收1 d B压缩输出功率P1 d B_Rx大于10 d Bm,全态输入输出驻波均小于1.7,＋5 V下工作电流130 m A,-5 V下工作电流12 m A。衰减器全态RMS精度小于1.4 d B,全态附加调相小于±8°。延时器全态RMS精度小于3 ps,全态附加调幅小于±1d B。
Based on the demand for equipment such as aerospace and satellite communications, the ultra wideband true-time delay multi-function chip （MFC） is designed in this paper. Moreover, the digital and microwave circuits are integrated in the MFC, which contains T/R SPDTs, a 5 bit digitally controlled true-time delay（ TrD）, a 5 bit digitally controlled attenuator（ATF） two TWT amplifiers,equilizer and digital circuit. Characterized with compact size of 4.5 mm×5.0 mm× 0.07 mm, the MFC is fabricated on GaAs E/D PHEMT technology. The test results on wafer show that the MFC provides 10 310 ps with an interval of 10 ps and 1 -31 dB with an interval of 1 dB in the frequency range of 3 ~ 17 GHz. The test re- sults show that the measured gain is more than 2 dB, and the 1 dB compressed output power P1dB_Tx is more than 12 dB in transmitting mode;while in receiving mode,the test gain is more than 2 dB ,and the l dB compressed output power P1dB_ax is more than 10 dB. The input and output VSWRs are better than 1.7 on the whole bandwidth for all states. The ＋5 V DC power consumption is better than 130 mA, and the -5 V DC power consumption is less than 12 mA. The root mean square （RMS） of ATr and phase variation is reduced to 1.4 dB and ±8° for all states. The root mean square （RMS） of TTD and insertion variation is reduced to 3 ps and ±1dB for all states.
出处
《微波学报》
CSCD
北大核心
2018年第1期84-88,共5页
Journal of Microwaves
基金
国家自然科学基金(60671057)
关键词
超宽带
砷化镓单片集成电路
多功能芯片
实时延时器
数控衰减器
uhra-wideband, GaAs MMIC, multi-function chip （ MFC ）, true-time delay （ TTD ）, digitally controlled attenuator （ATr）
