摘要
采用0.25μm GaAs pHEMT工艺研制了一款分布式功率放大器,详细介绍了电路设计和优化过程。通过增加低频交流终端,使得该放大器低频段的增益平坦度有明显的改善。仿真结果表明该放大器带宽约为30 GHz,小信号增益约为8.5 dB,1 dB压缩点输出功率约为21 dBm,功率附加效率最高能达到20%以上。
This paper describes a distributed power amplifier(DA)which was developed using 0.25μm GaAs pHEMT process.The process of its circuit design and optimization is presented in details.Gain flatness in the low frequency range of this DA has a significant improvement by employing low frequency termination.The simulation result shows that DA which operates between DC and 30 GHz has a gain of 8.5 dB and 21 dBm of output power at 1 dB gain compression and maximum PAE up to 20%.
作者
刘雁鹏
魏启迪
章国豪
Liu Yanpeng;Wei Qidi;Zhang Guohao(School of Information Engineering,Guangdong University of Technology,Guangzhou 510006,China)
出处
《电子技术应用》
2018年第10期48-51,55,共5页
Application of Electronic Technique
