摘要
设计了一种2~35 GHz单片集成功率检测电路。采用Ga As增强/耗尽（E/D）赝配高电子迁移率晶体管（PHEMT）工艺,研制出将功率检波器与电压比较器及输出驱动器单片集成的功率检测电路。采用肖特基二极管实现功率检波器;采用直接耦合场效应晶体管逻辑结构（DCFL）实现电压比较器及输出驱动器。实验结果显示,功率检测单片微波集成电路（MMIC）在输入功率大于3 d Bm条件下输出逻辑电平翻转,从而实现功率检测与指示。功率检测电路芯片在5 V下的静态电流为2 m A,输出高电平电压4.9 V,低电平电压0 V,在2~35 GHz工作频带输入驻波比小于1.5,芯片尺寸为0.65 mm×1.1 mm,此款芯片可广泛应用于接收机、发射机及测试测量仪器中。
A novel power detector monolithic microwave integrated circuit（ MMIC） with frequency range from 2 GHz to 35 GHz was designed. The MMIC was developed based on Ga As enhancement and depletion（ E / D） mode pseudomorphic high electron mobility transistor（ PHEMT） process. In the MMIC power detector, voltage comparator and output driver were integrated monolithically. Schottky diode and direct coupled FET logic structure（ DCFL） were employed to realize the detector,comparator and output driver. The measured results show that the output logic level of the power detector MMIC changes under the input threshold power of 3 d Bm to realize the function of power detect and indicate.The static current of the power detector is 2 m A under the supply voltage of 5 V. The output voltage level of high and low are 4. 9 V and 0 V respectively. The input voltage standing wave ratio（ VSWR） of the MMIC is less than 1. 5 over the working frequency range of 2- 35 GHz. The die size of the MMIC is0. 65 mm × 1. 1 mm. The MMIC can be used in receiver,transmitter and measurement instruments.
出处
《半导体技术》
CAS
CSCD
北大核心
2016年第1期27-31,共5页
Semiconductor Technology
