摘要
化学机械抛光(CMP)是集成电路(IC)制造过程中的一种基本工艺。在铜CMP过程中,缓蚀剂在获得全局平面化和防止腐蚀方面起着关键作用。阐述了常用的缓蚀剂--苯并三氮唑(BTA)在抛光液中的应用,并指出BTA由于其本身的局限性已经难以适应IC发展的技术需求。对近年来国内外能够替代BTA的新型缓蚀剂进行了归纳总结。与BTA相比,新型缓蚀剂能够更好地解决结构性损伤、电偶腐蚀和残留污染物的危害等问题。最后,对缓蚀剂在铜布线CMP过程中的发展趋势进行了分析和展望。在碱性条件下,未来需要重点研究缓蚀剂的缓蚀效果、作用机理、复配协同效应以及去除等问题。
Chemical mechanical polishing(CMP) is a basic process of integrated circuit(IC) manufacturing. Corrosion inhibitors play a key role in obtaining global planarization and preventing corrosion during copper CMP. The application of benzotriazole(BTA), a commonly used corrosion inhibitor, in the polishing solution is described. It is pointed out that BTA has been difficult to adapt to technical requirements for IC development due to its own limitations. The new corrosion inhibitors that can replace BTA all over the world in recent years are summarized. Compared with BTA, the new corrosion inhibitors can better solve the problems of structural damage, galvanic corrosion and residual pollutants. Finally, the development trends of corrosion inhibitors in copper wiring CMP are analyzed and prospected. In alkaline conditions, it is necessary to focus on the corrosion inhibition effect, mechanism, synergistic effect and removal of corrosion inhibitors in the future.
作者
王玄石
高宝红
曲里京
檀柏梅
牛新环
刘玉岭
Wang Xuanshi;Gao Baohong;Qu Lijing;Tan Baimei;Niu Xinhuan;Liu Yuling(School of Electronic and Information Engineering,Hebei University of Technology,Tianjin 300130,China;Institute of Microelectronic Technology and Material,Hebei University of Technology,Tianjin 300130,China)
出处
《半导体技术》
CAS
北大核心
2019年第11期863-869,共7页
Semiconductor Technology
基金
国家自然科学基金资助项目(61704046)
国家科技重大专项资助项目(2016ZX02301003-004-007)
河北省自然科学基金资助项目(F2018202174,F2018202133)
