摘要
对不同参数的掺钕晶体双频微片激光器(DFML)进行频差温度特性研究.探索了在不同腔长、不同种类掺钕介质的DFML中,晶体温控温度对双频信号频差的影响.结果表明,双频信号频差与谐振腔光学腔长成反比,与晶体温控温度呈正相关;其中0.5mm腔长DFML(Nd∶YVO4)的双频信号频差随晶体温控温度的变化率为0.34GHz/℃,0.8mm腔长DFML(Nd∶YVO4)的双频信号频差随晶体温控温度的变化率为0.12GHz/℃,1mm腔长DFML(Nd∶YVO4)的双频信号频差随晶体温控温度的变化率为0.044GHz/℃;即腔长越短,晶体温控温度对频差的影响越大.不同材料Nd∶YVO4和Nd∶GdVO4晶体1mm腔长的DFML双频信号频差随晶体温度的变化率相近,仿真与实验结果符合较好.
The frequency separation temperature characteristics of Nd-doped Dual-frequency Microchip Lasers (DFMLs) were studied.The frequency separation versus the crystal temperature of DFML with different cavity lengths and different kinds of gain medium are experimented.The experimental results show that,the frequency separation is inversely proportional to the cavity length,and positively related to the crystal temperature.The frequency separation change rates with crystal temperatures of 0.5 mm,0.8 mm and 1 mm DFML (Nd∶YVO 4 ) are 0.34 GHz/℃,0.12 GHz/℃ and 0.04 GHz/℃,the shorter the cavity length is,the greater frequency separation change with the crystal temperature is.The frequency separation change rate with crystal temperature of 1 mm DFML (Nd∶YVO 4 ) and (Nd∶GdVO 4 ) is nearly same,the simulation agrees with the experimental results well.
作者
邹宇玲
胡淼
李鹏
欧军
周雪芳
杨国伟
卢旸
毕美华
ZOU Yu-ling;HU Miao;LI Peng;OU Jun;ZHOU Xue-fang;YANG Guo-wei;LU Yang;BI Mei-hua(College of Communication Engineering,Hangzhou Dianzi University,Hangzhou 310018,China;State Key Laboratory of NBC Protection for Civilian,Beijing 102205,China;Research Institute of Chemical Defense,Beijing 102205,China)
出处
《光子学报》
EI
CAS
CSCD
北大核心
2019年第6期63-69,共7页
Acta Photonica Sinica
基金
国家自然科学基金(No.61705055)
国民核生化灾害防护国家重点实验室开放基金(No.SKLNBC2015G03)~~
关键词
双频微片激光器(DFML)
频差调谐
温度控制
光学谐振腔
掺钕激光晶体
Dual-Frequency Microchip Laser (DFML)
Frequency separation tuning
Temperature control
Optical cavity
Nd^3+ doped laser crystal