摘要
根据微片激光器工作温度、增益介质发射谱和谐振波长三者的关系，研究了双频Nd：YV04微腔激光器的功率均衡机制。在实验中，通过温控调节双频激光波长和发射谱的相对漂移，实现了双频激光的相对功率可调。实验结果表明，当激光器温度在2．5～22．5℃范围增加时，双频激光的右峰／左峰相对功率比从6．471变化到0．028；当温控在9．1℃时，双频激光的相对功率比约为1．00：1．00，实现了功率均衡；当温控在7．5℃时，双频激光的相对功率比为1．89：1．00，此时双频激光的功率乘积最大，可实现最高拍频效率。
According to the relationship among the stimulated emission spectrum of the laser gain medi- um, the dual-mode resonant wavelengths and the operating temperature of the microchip laser, the output power equalization mechanism of dual-frequency modes in a Nd-doped yttrium vanadate （Nd： YVO4 ） microchip laser is experimentally investigated. In experiments, by controlling the operating temperature of laser gain medium and the wavelength shifting between the resonant wavelengths and the stimulated emission spectrum, the dual-frequency laser with adjustable relative output power is provided. The experimental results also show that peak power ratio of dual-frequency modes （right component vs. left com- ponent） is decreased from 6. 471 to 0. 028 when the operating temperature of the microchip lasers in- creased from 2.5 ℃ to 22.5 ℃ . When the operating temperature of the microchip laser is set at 9.1 ℃, the peak power ratio of dual-frequency modes is maintained at nearly 1.00 ：1.00 ,which is named as du- al-mode power equalization. When the operating temperature of the microchip laser is set at 7.5 ℃, the peak power ratio reaches nearly 1.89 ：1.00. In such a condition,the peak power product of dual-fre-quency modes reaches the maximum, which can be used for beat-noting with the highest efficiency.
出处
《光电子．激光》
EI
CAS
CSCD
北大核心
2016年第2期145-149,共5页
Journal of Optoelectronics·Laser
基金
“区域光纤通信网与新型光通信系统国家重点实验室”开放基金(015GZKF03008)资助项目
关键词
双频微片激光器
受激发射截面
功率均衡
温控
dual-frequency microchip laser
stimulated cross section
power equalization
temperaturecontrol
