摘要
为了确定激光晶体在不同温度下的自发辐射光谱(荧光谱),实验研究了阈值附近微片激光器的输出光谱特性。当抽运功率略小于阈值时,微片激光器输出经干涉的自发辐射光;当抽运功率大于阈值时,微片激光器输出激光。测量了激光阈值与晶体温控的关系,结果表明激光阈值随晶体温度的升高而增加,其变化率为0.017 W/℃。在不同温控条件下,对阈值以下的自发辐射光谱包络进行了拟合测量,结果表明随着晶体温度的升高自发辐射光谱包络峰值降低,下降率为0.681%/℃;光谱包络中心波长发生红移,漂移率为3.1pm/℃。
To determine the spontaneous emission light spectrum（fluorescence light spectrum）of microchip laser crystals at different temperatures,the output spectral characteristics of a microchip laser near the threshold are experimentally studied.In the experiments,when pump power is tuned slightly less than laser threshold,the output light of microchip laser is after spontaneous emission light interference.Otherwise,when pump power is tuned larger than laser threshold,the output light of microchip laser is laser light.The relationship of laser threshold and the crystal temperature of microchip laser is measured.In the measurements,the laser threshold is increased with the increase of the crystal temperature,and the increasing rate is measured as 0.017W/℃from 5℃to 25℃.We also study the envelope of spontaneous emission light spectra beneath the laser threshold with different crystal temperatures.The research results show the higher the temperature of laser crystal is,the lower the spontaneous emission light spectral envelope peak is,and the decreasing rate is measured as 0.681%/℃from 5℃to 25℃.The red shift of the spontaneous emission light spectral envelope with increasing the temperatures of laser crystal was also observed,and the red-shift versus crystal temperature rate is measured as 3.1pm/℃from 5℃to 25℃.
出处
《光电子．激光》
EI
CAS
CSCD
北大核心
2016年第10期1036-1041,共6页
Journal of Optoelectronics·Laser
基金
区域光纤通信网与新型光通信系统国家重点实验室开放基金(2015GZKF03008)
中国气象局大气探测重点开放实验室开放课题(KLAS201409)
浙江省公益技术研究工业项目(2016C31068)资助项目
关键词
微片激光器
激光阈值
光谱特性
温控
microchip laser
laser threshold
spectral characteristic
temperature control
