摘要
报道了基于分子束外延碲镉汞短/中波双色材料、器件的最新研究进展。采用分子束外延方法制备出了高质量的短/中波双色碲镉汞材料,并优化了材料的质量,材料表面缺陷密度控制在500个/cm-2以内,通过扫描电子显微镜可以看出各层之间界面陡峭,使用傅里叶红外变换光谱仪(FTIR)、X射线衍射(XRD)等方法对材料进行了表征,基于此材料制备出了短/中波碲镉汞双色器件,器件测试性能良好。
The latest research progress on materials and devices of dual-band MCT based on molecular beam epitaxy were presented. High quality MCT dual-band thin films were prepared by MBE technology and improvements on mac-ro-defects and crystal quality- were made. Wafers were measured by SEM, FTIR, XRD. FPAs were produced by mating devices from these wafers to dual-band read-out integrated circuits. The FPAs exhibited high optical-electronic quality at 80K.
作者
王经纬
晋舜国
陈慧卿
王亮
周立庆
WANG Jing-wei;JIN Shun-guo;CHEN Hui-qing;WANG Liang;ZHOU Li-qing(Focal Plane Arrays Department,North China Research Institute of Electro-Optics,Beijing 100015,China)
出处
《激光与红外》
CAS
CSCD
北大核心
2018年第11期1395-1398,共4页
Laser & Infrared
