摘要
报道了使用分子束外延(Molecular beam epitaxy,MBE)技术,在(211)B碲镉汞(CdZnTe,CZT)衬底上生长中长波双色碲镉汞(HgCdTe,MCT)薄膜材料,生长温度为180℃,研究了双色碲镉汞薄膜材料衬底脱氧技术、分子束外延薄膜生长温度与缓冲层生长等关键技术,实现了中长波双色碲镉汞薄膜生长,外延薄膜采用相差显微镜、扫描电子显微镜(SEM)、傅里叶变换红外光谱仪(FTIR)、二次离子质谱仪(SIMS)及X射线衍射仪(XRD)对薄膜的表面缺陷、厚度、组分及其均匀性、薄膜纵向组分以及晶体质量进行了表征,表面缺陷数量低于600 cm^(-2),组分(300 K测试)和厚度均匀性分别为(35)x≤0.001、(35)d≤0.9μm,X-Ray双晶衍射摇摆曲线FWHM=65 arcsec,得到了质量较高的中长波双色碲镉汞薄膜材料。
Results are reported on the molecular-beam epitaxial （MBE） growth of a dual-band HgCdTe （MCT） structure. The structures were designed for a mid/long（M/L）-wavelength infrared detector, grown at 180℃ on （211）B-oriented CdZnTe substrates. Growth details including substrate deoxidation, growth temperature, and buffer layer are also reported . The surface quality, defect quantity, compositional uniformity, thickness uniformity, composition profile and crystal quality were analyzed and tested using phase contrast microscopy, scanning electron microscopy, Fourier-transform infrared transmission, secondary-ion mass spectroscopy and X-ray diffraction rocking curve. The surface defect was less than 600 cm-2, the compositional uniformity was ≤0.001 and thickness uniformity was ≤0.9m, the XRD FWHM shows a 65 arcsec result, all indicating good surface and crystal quality for our dual-band MBE MCT
出处
《红外技术》
CSCD
北大核心
2018年第1期1-5,共5页
Infrared Technology
基金
总装备部光电火控基金项目
