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碲锌镉缓冲层液相外延技术的研究

LPE Growth of CdZnTe Buffer Layers on CdZnTe Substrates
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摘要 文章报道了采用液相外延方法,在碲锌镉衬底上进行碲锌镉薄膜缓冲层生长的情况,并且采用X光双晶衍射仪、X光形貌仪、红外傅里叶光谱仪、二次离子质谱仪等手段对碲锌镉薄膜进行了表征,碲锌镉薄膜具有较好地组分及均匀性,晶体结构质量也较好。采用碲锌镉缓冲结构生长了碲镉汞液相外延片,其碲锌镉与碲镉汞薄膜界面附近的杂质得到了有效的控制。 This article presents the result of LPE CdZnTe on CdZnTe substrates. The CdZnTe epilayer was characterized with X-ray diffraction, X-ray topography, SIMS and FTIR. The LPE CdZnTe films on CdZnTe substrate show good composition and uniformity, good crystal quality. The impurity between HgCdTe and CdZnTe buffer layer is controlled very well by this HgCdTe/CdZnTe/CdZnTe structure.
出处 《激光与红外》 CAS CSCD 北大核心 2007年第B09期907-909,共3页 Laser & Infrared
关键词 碲锌镉薄膜 液相外延 薄膜特性 CdZnTe film LPE epilayer characterization
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  • 1Nibir K Dhar. Large Format I RFPA Development on Silicon [ A ]. Proc. SPIE,2004,5564: 34 - 43. 被引量:1
  • 2R Triboulet. Substrate Lssues for the Growth of Mercury Cadmium Telluride [ J ]. Journal of Electronic Materials,1993,22(8) :827 -834. 被引量:1
  • 3Carl J Johnson. Recent Progress in Lattice Matched Substrates For HgCdTe Epitaxy[ A]. Proc. SPIE, 1989,1106:56 - 68. 被引量:1
  • 4Philippe Tribolet. MCT Technology Challeges for Mass Production[ J ]. Journal of Electronic Materials, 2001,30(6) :574 -584. 被引量:1
  • 5Paul Lo Vecchio. Advances in Liquid Phase Eiptaxial Growth of Hg1 -xCdxTe for SWlR through VLWIR Photodiodes [ A ]. Proc. SPIE,2004,5564:65 - 72. 被引量:1
  • 6G Bostrup. LPE HgCdTe on Sapphire Status and Advancements [ J ]. Journal of Electronic Materials, 2001,30 ( 6 ):560 - 565. 被引量:1
  • 7V S Varavin. HgCdTe epilayers on GaAs: growth and devices [ J ]. Opto-Electronics Review, 2003,11 ( 2 ): 99 -111. 被引量:1
  • 8J P Zanatta. Heteroepitaxy of HgCdTe ( 211 ) B on Ge Substrates by Molecular Beam Epitaxy for Infrared Detectors[ J ]. Journal of Electronic Materials, 1998,27 ( 6 ):542 - 545. 被引量:1
  • 9P Ferret. Status of the MBE Technology at LETI LIR for the Manufacturing of HgCdTe Focal Plane Arrays [J].Journal of Electronic Materials,2000,29(6) :641 -647. 被引量:1

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