摘要
文章报道了采用Si基复合衬底,利用液相外延方法成功进行中波碲镉汞薄膜生长的情况,并且采用X光双晶衍射、X光形貌、红外付立叶光谱仪等手段对碲镉汞薄膜进行了表征。Si基复合衬底碲镉汞外延膜晶体结构为单晶,并且它的双晶衍射半峰值接近国外同类产品的先进水平。
In the article the good result of LPE MW Hg1-xCdxTe on silicon composite substrates is presented, The Hg1-xCdxTe epilayer was characterized with X-ray diffraction, X-ray topography and FTIR. The LPE MW Hg1-xCd,Te on silicon composite substrate is single crystal, and its FWHM is as low as that of the best result published before.
出处
《激光与红外》
CAS
CSCD
北大核心
2006年第11期1054-1056,共3页
Laser & Infrared
