摘要
在分子束外延生长高质量的CdTe/Si复合衬底上,分别通过MBE和LPE技术成功地研制出Hg1-xCdxTe/CdTe/Si红外探测器所需的重要红外半导体材料。利用傅里叶变换红外光谱仪对Hg1-xCdxTe/CdTe/Si红外半导体材料的红外透射光谱进行测试分析且计算薄膜厚度,并配合扫描电子显微镜对其厚度计算分析进行校正,最终获得一种无破坏、无污染、快捷方便的多层膜厚度测试方法。
High quality CdTe/Si composite substrate is grown by molecular beam epitaxy. We developHg1-xCdxTe/CdTe/si which is an important infrared material and used for making infrared detector by MBE and LPE respectively. The infrared transmission spectrum of Hg1-xCdxTe/CdTe/sianalyzed and then the film thickness is calcu- lated. The SEM measurement result is used for correcting. Finally, we establish a non-destructive, non-polluted, fast and convenient measurement method for muhilayer film thickness.
出处
《激光与红外》
CAS
CSCD
北大核心
2012年第12期1351-1354,共4页
Laser & Infrared
