摘要
碲镉汞(HgCdTe)材料的少子寿命是影响碲镉汞红外探测器性能的重要参数。分别采用微波光电导衰减(Microwave Photoconductivity Decay,-PCD)法和微波探测光电导(Microwave Detected Photoconductivity,MDP)法对HgCdTe薄膜的少子寿命进行了研究。结果表明,随着激光功率的增强,样品的少子寿命降低;由于载流子复合机制的变化,HgCdTe薄膜的少子寿命随温度的增加有先增后减的趋势。通过HgCdTe薄膜少子寿命面分布可以得出样品不同区域的载流子浓度分布与均匀性。对于HgCdTe薄膜材料来说,以上两种测试结果的面分布状况相近。
The minority carrier lifetime of the mercury cadmium telluride(HgCdTe)material is an important parameter that affects the performance of the HgCdTe infrared detector.Microwave photoconductivity decay(-PCD)and microwave detected photoconductivity(MDP)methods are used to study the minority carrier lifetime of HgCdTe thin films.The results show that with the increase of laser power,the minority carrier lifetime of the sample decreases;due to the change of the carrier recombination mechanism,the minority carrier lifetime of the HgCdTe thin film increases first and then decreases with the increase of temperature.The distribution and uniformity of the carrier concentration in different regions of the sample can be obtained through the minority carrier lifetime distribution of the HgCdTe thin film.For HgCdTe thin film materials,the surface distributions of the above two test results are similar.
作者
折伟林
申晨
李乾
刘铭
李达
师景霞
SHE Wei-lin;SHEN Chen;LI Qian;LIU Ming;LI Da;SHI Jing-xia(North China Research Institute of Electro-Optics, Beijing 100015, China)
出处
《红外》
CAS
2021年第6期1-6,共6页
Infrared
关键词
碲镉汞
少子寿命
微波光电导衰减法
微波探测光电导法
HgCdTe
minority carrier lifetime
microwave photoconductivity decay method
microwave detected photoconductivity method
