摘要
杂质是影响碲镉汞器件性能的重要因素之一。对于碲锌镉衬底晶体和窄禁带碲镉汞材料来说,杂质的影响更加显著。主要论述了碲镉汞材料中常见的杂质类型以及杂质在材料中的作用,并分析了影响器件性能的主要杂质。采用辉光放电质谱法(Glow Discharge Mass Spectrometry,GDMS)测试了材料中的杂质含量,同时通过改进的区熔工艺降低了碲锌镉衬底及液相外延生长的碲镉汞薄膜材料中的杂质含量,提高了碲镉汞薄膜的电学性能,从而满足高性能碲镉汞红外探测器的制备要求。
Impurities are one of the important factors affecting the performance of HgCdTe devices.For CdZnTe substrate crystals and narrow bandgap HgCdTe materials,the impact of impurities is more significant.The common impurity types in HgCdTe materials and the role of impurities in the materials are mainly discussed.The main impurities that affect the performance of the device are analyzed.Glow discharge mass spectrometry(GDMS)is used to test the impurity content in the material.At the same time,the impurity content in the CdZnTe substrate and the HgCdTe thin film material grown by liquid phase epitaxy is reduced through the improved zone melting process.The electrical performance of HgCdTe thin film is improved to meet the preparation requirements of high-performance HgCdTe infrared detectors.
作者
孙书奎
SUN Shu-kui(North China Research Institute of Electro-Optics, Beijing 100015,China)
出处
《红外》
CAS
2021年第3期11-16,共6页
Infrared
关键词
杂质
碲镉汞
碲锌镉
impurity
mercury cadmium telluride
CdZnTe
