摘要
采用TSMC RF CMOS 0.13μm工艺设计了一款共源共栅结构的低噪声放大器(Low Noise Amplifier,LNA),该放大器应用于移动通信主流标准TD-SCDMA 2 GHz中。先初步计算电路参数,后经ADS调谐折中选择电路参数。利用安捷伦公司(Agilent)射频EDA平台ADS2009对电路进行仿真。结果表明,该LNA在1.2 V电源电压下,功耗仅为3 mW,正向功率增益为18.96 dB,输入输出匹配均小于-30 dB,噪声系数为1.15 dB,且输入1 dB压缩点为-9 dBm,满足预期的设计要求。
Using the TSMC RF CMOS 0. 13 μm process,a lownoise amplifier（ LNA） with cascode was designed which was applied to the mobile communications standard TD-SCDMA 2 GHz. The circuit parameters were initially calculated,then were chosen by using ADS. The circuit was simulated by using the ADS2009 of Agilent＇s radio frequency EDA platform. The results showthat the power consumption of the LNA is only 3 m Win the 1. 2 V supply voltage,the power gain is 18. 96 dB,the input and output matchings are also less than-30 dB,the noise figure（ NF） is 1. 15 dB,and the input 1 dB compression point is-9 dBm. The LNA meets the anticipated requirements.
作者
尹强
黄海生
曹新亮
杨锐
YIN Qiang;HUANG Haisheng;CAO Xinliang;YANG Rui(School of Electronic Engineering,Xi＇an University of Posts and Telecommunications,Xi＇an 710121,China;School of Physics and Electronic Information,Yan＇an University,Yan＇an 716000,Shaanxi Province China)
出处
《电子元件与材料》
CAS
CSCD
北大核心
2018年第6期68-72,共5页
Electronic Components And Materials
基金
国家自然科学基金-地区基金(61661049)
