摘要
随着以SiC和GaN为代表的宽禁带半导体材料(即第三代半导体材料)设备、制造工艺与器件物理的迅速发展,SiC和GaN基的电力电子器件逐渐成为功率半导体器件的重要发展方向。第三代半导体功率器件以更高的击穿电压、更高的热导率、更高的电子饱和漂移速率和更高的抗辐射能力开始在军事、航空航天等领域崭露头角。作者从第三代半导体材料性能应用、行业领先者及市场并购、各国发展战略以及中国力量与思考多个角度,浅析第三代半导体功率器件市场。
With the rapid development of the wide band gap semiconductor materials represented by Si C and Ga N（the third generation semiconductor materials） and the manufacturing process and device physics, Si C and Ga N based power electronic devices have gradually become the important development direction of power semiconductor devices. The third generation semiconductor power devices have begun to emerge in military, aerospace and other fields with higher breakdown voltage, higher thermal conductivity, higher electron saturation drift rate and higher radiation resistance. The paper analyzes the third generation semiconductor power device market from the perspective of third generation semiconductor material performance applications, industry leaders and market mergers and acquisitions, and China＇s development strategies and thinking.
作者
林佳
黄浩生
LIN Jia;HUANG Haosheng(Qingdao Gallium semiconductor material Co., Ltd, Shandong 266061, China;China wide bandgap semiconductor technology innovation alliance, Beijing 100083, China)
出处
《集成电路应用》
2017年第12期83-86,共4页
Application of IC
基金
山东省科技型中小企业技术创新资金(10C26213714469)
关键词
第三代半导体
宽禁带
电力电子器件
SIC
GAN
third generation semiconductors, wide bandgap, power electronic devices, SiC,GaN
