摘要
利用专利对氧化锌宽禁带半导体材料技术的研发实力、技术领域、专利原创性和普遍性态势进行中外比较,根据主要竞争国家的综合竞争地位分析,发现我国该领域技术研发中的问题。研究表明尽管我国的专利增长率不断提高,但高质量专利较少,研发机构竞争实力不足,属于技术相对落后者。最后利用SWOT分析对提高氧化锌宽禁带半导体技术的创新水平给出相应的建议。
Using patent analysis, this paper compares zinc oxide wide band gap semiconductor material industry in China and foreign countries from R＆D strength, technical field, patent originality and generality. According to the analysis of comprehensive competition sta- tus of main countries, we found some problems in China： China＇s patent growth rate will continue to improve, but the technology is rela- tive backward with less high quality patents and lower competitiveness in R＆D institutions. At last, based on a SWOT analysis conducted, some to enhance the innovation of the industry in question are given.
出处
《情报杂志》
CSSCI
北大核心
2015年第11期62-68,149,共8页
Journal of Intelligence
基金
国家社会科学基金重大项目"新兴技术未来分析理论方法与产业创新研究"(编号:11&ZD140)
关键词
氧化锌
宽禁带半导体材料
专利分析
中外比较
zinc oxide wide band gap semiconductor material patent analysis contrastive analysis
