摘要
采用溶胶-凝胶法在硅片上制备了掺杂稀土离子Tb^(3+)的SiO_2薄膜,并用荧光分析方法研究了薄膜的发光特性,对发光效果的提升途径做了探索和分析。在245 nm波长的激发下,能够观察到Tb^(3+)的5D4-7FJ(J=6,5,4,3)的跃迁发射峰。对于Tb^(3+)离子的高浓度掺杂体系,在掺入富Si或Al^(3+)离子后,浓度猝灭效应能得到明显改善。同时掺入两种激活剂的样品发光强度较只掺Al^(3+)的样品大了近一倍。此外,氩气氛退火引入氧空位缺陷也能使样品的发光强度有较大提升,氩气氛退火的最佳温度为1 200℃。
SiO_2∶ Tb^（3＋）films were prepared on silicon chips by sol-gel method. The photoluminescence characterizations of the films were studied by fluorescence analysis,and the ways to improve the luminescence were explored and analyzed. Excited by 245 nm,the peaks of transition emissions of5D4-7FJ（ J = 6,5,4,3） of Tb^（3＋）can be observed. The concentration quenching effect of the system with high concentration doping of Tb^（3＋）ions,can be significantly improved after the co-doping of Si or Al^（3＋）. The luminescence intensity of the sample doped by Si and Al^（3＋）is twice as that of Al^（3＋）-doped sample. In addition,the oxygen vacancy defect introduced by annealing under Ar atmosphere can make the system get significantly enhanced emissions,and the best annealing temperature is 1 200 ℃.
出处
《发光学报》
EI
CAS
CSCD
北大核心
2016年第12期1464-1470,共7页
Chinese Journal of Luminescence
基金
江苏省自然科学基金(BK20141337)资助项目
关键词
TB3+
硅基材料
荧光分析法
溶胶凝胶法
Tb3＋ ion
silicon-based material
fluorescence analysis
sol-gel method
