摘要
阐述了等电子杂质、掺Er硅、硅基量子结构(包括量子阱、量子线和量子点)及多孔硅的发光机理,综述了90年代以来a-Si/SiO2、SiGe/Si等Si基异质结构材料的优异特性和诱人的应用前景,着重介绍了能带工程为Si基异质结构带来的新特性、新功能,重点介绍了硅基量子点的制备和发光机理,综述了半导体量子点材料的最新发展动态和发展趋势。
The isoelectronic impurity,Er-doped silicon,Si-based quantum structure(including quantum well,quantum wire and quantum dot)and porous silicon luminescence are demonstrated.The progress of Si-based heterostructures since90s,including heterostructure materials,characteristics and future applications are re viewed.The emphasis is placed on the new characteristics and functions of Si-based heterostructures,which are introduced by energy band engineering.The preparation and luminescence mechanism of Si-based quantum dot are introduced chiefly.The latest progress and trend of semiconductor quantum dot materials are reviewed also.
出处
《微纳电子技术》
CAS
2002年第8期18-21,共4页
Micronanoelectronic Technology
